Please use this identifier to cite or link to this item:
https://hdl.handle.net/10356/97163
Title: | Analysis of laterally non-uniform layers and sub-micron devices by Rutherford backscattering spectrometry | Authors: | Pey, Kin Leong Lee, Pooi See Mangelinck, D. Osipowitcz, T. |
Keywords: | DRNTU::Engineering::Materials | Issue Date: | 2003 | Source: | Mangelinck, D., Lee, P. S., Osipowitcz, T., & Pey, K. L. (2004). Analysis of laterally non-uniform layers and sub-micron devices by Rutherford backscattering spectrometry. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 215(3-4), 495-500. | Series/Report no.: | Nuclear instruments and methods in Physics research Section B: beam interactions with materials and atoms | Abstract: | A method for analyzing sub-micron devices by Rutherford backscattering spectrometry is presented. Using simplifying assumptions, we are able to simulate the backscattering spectrum of laterally non-uniform samples. The method has been verified with Ni/Pt laterally non-uniform layers on (1 0 0)Si substrate and has been applied to characterize the formation of Ni silicide in structures similar to metal oxide semiconductor (MOS) transistors. It is shown that the analysis of devices with a linewidth as low as 0.25 μm is possible using micro RBS and the method of simulation that we have developed. | URI: | https://hdl.handle.net/10356/97163 http://hdl.handle.net/10220/10518 |
ISSN: | 0168-583X | DOI: | 10.1016/j.nimb.2003.08.040 | Schools: | School of Electrical and Electronic Engineering School of Materials Science & Engineering |
Rights: | © 2003 Elsevier B.V. | Fulltext Permission: | none | Fulltext Availability: | No Fulltext |
Appears in Collections: | EEE Journal Articles |
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