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https://hdl.handle.net/10356/97202
Title: | Enhanced stability of Ni monosilicide on MOSFETs poly-Si gate stack | Authors: | Mangelinck, D. Osipowicz, T. Dai, J. Y. See, A. Lee, Pooi See Pey, Kin Leong Ding, Jun Chi, Dong Zhi |
Issue Date: | 2002 | Source: | Lee, P. S., Mangelinck, D., Pey, K. L., Ding, J., Chi, D. Z., Osipowicz, T., et al. (2002). Enhanced stability of Ni monosilicide on MOSFETs poly-Si gate stack. Microelectronic engineering, 60(1-2), 171-181. | Series/Report no.: | Microelectronic engineering | Abstract: | The formation and stability of Ni(Pt)Si on metal oxide semiconductor field effect transistor (MOSFETs) polycrystalline-Si (poly-Si) gate stack was investigated. Poly-Si and partial amorphous Si (a-Si) structures were grown using LPCVD and RTCVD techniques. For pure Ni silicidation, nucleation of NiSi2 was found at 700°C, which is slightly lower than that on monocrystalline Si (about 750°C). With Pt addition, Ni(Pt)Si was found up to 800°C, implying the important role of Gibbs free energy changes in enhancing the monosilicide stability. The extent of layer inversion of Ni(Pt)Si on RTCVD-Si is less than that on LPCVD-Si and thus results in a slower sheet resistance degradation. | URI: | https://hdl.handle.net/10356/97202 http://hdl.handle.net/10220/10542 |
ISSN: | 0167-9317 | DOI: | 10.1016/S0167-9317(01)00592-5 | Schools: | School of Materials Science & Engineering | Rights: | © 2002 Elsevier B.V. | Fulltext Permission: | none | Fulltext Availability: | No Fulltext |
Appears in Collections: | MSE Journal Articles |
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