Please use this identifier to cite or link to this item:
https://hdl.handle.net/10356/100181
Title: | CMOS-MEMS capacitive sensors for intra-cranial pressure monitoring : sensor fabrication & system design | Authors: | George, Arup K. Chan, Wai Pan Narducci, Margarita Sofia Kong, Zhi Hui Je, Minkyu |
Keywords: | DRNTU::Engineering::Electrical and electronic engineering | Issue Date: | 2012 | Source: | George, A. K., Chan, W. P., Narducci, M. S., Kong, Z. H., & Je, M. (2012). CMOS-MEMS capacitive sensors for intra-cranial pressure monitoring: Sensor fabrication & system design. 2012 International SoC Design Conference (ISOCC 2012). | Conference: | International SoC Design Conference (2012 : Jeju, Korea) | Abstract: | Low-frequency variation of intracranial pressure (ICP) is a key indicator determining the successful outcome of a patient, subjected to traumatic brain injury (TBI). Post-trauma ICP increase can lead to fatal secondary injuries and hence continuous ICP monitoring would be an essential modality required in a neuro-monitoring system. This paper discusses the system design considerations of an integrated CMOS-MEMS sensor system for monitoring ICP in patients subjected to TBI. Design and fabrication steps of the on-chip CMOS-MEMS sensor are presented first. Interface circuit design challenges introduced by the low, not-well-controlled MEMS sensitivity and large offset due to the fabrication tolerance are discussed next. A review and comparison of the reported capacitive sensors and their interface circuits follows. The paper concludes discussing the biocompatible packaging of the system for in-vivo testing. | URI: | https://hdl.handle.net/10356/100181 http://hdl.handle.net/10220/13608 |
DOI: | 10.1109/ISOCC.2012.6407119 | Schools: | School of Electrical and Electronic Engineering | Fulltext Permission: | none | Fulltext Availability: | No Fulltext |
Appears in Collections: | EEE Conference Papers |
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