Please use this identifier to cite or link to this item:
https://hdl.handle.net/10356/102380
Title: | Improvement of endurance degradation for oxide based resistive switching memory devices correlated with oxygen vacancy accumulation effect | Authors: | Gao, Bin Yu, Hongyu Lu, Y. Chen, B. Fang, Z. Fu, Y. H. Yang, J. Q. Liu, L. F. Liu, X. Y. Kang, J. F. |
Keywords: | DRNTU::Engineering::Electrical and electronic engineering | Issue Date: | 2012 | Source: | Lu, Y., Chen, B., Gao, B., Fang, Z., Fu, Y. H., Yang, J. Q., Liu, L. F., Liu, X. Y., Yu, H., & Kang, J. F. (2012). Improvement of endurance degradation for oxide based resistive switching memory devices correlated with oxygen vacancy accumulation effect. 2012 IEEE International Reliability Physics Symposium (IRPS), pp.MY.4.1-MY.4.4. | Conference: | IEEE International Reliability Physics Symposium (2012 : Anaheim, California, US) | Abstract: | We report that the endurance degradation behaviors of transitional metal oxide (TMO) based resistive random access memory (RRAM) is dominated by three different steps and correlated with extra oxygen vacancy accumulation during SET/RESET switching process. The physical origin of endurance degradation due to the pulse voltage effect is verified by the measured data. The optimized operation schemes are accordingly proposed and implemented to enhance the endurance behavior. More than 108 switching cycles are achieved in the TiN/HfOx/TiOx structured devices. | URI: | https://hdl.handle.net/10356/102380 http://hdl.handle.net/10220/16380 |
DOI: | 10.1109/IRPS.2012.6241921 | Schools: | School of Electrical and Electronic Engineering | Fulltext Permission: | none | Fulltext Availability: | No Fulltext |
Appears in Collections: | EEE Conference Papers |
SCOPUSTM
Citations
20
15
Updated on Feb 26, 2024
Page view(s) 20
621
Updated on Mar 27, 2024
Google ScholarTM
Check
Altmetric
Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.