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Date	Title	Author	Type
2006	Electrical characteristics of Si nanocrystal distributed in a narrow layer in the gate oxide near the gate synthesized with very-low-energy ion beams.	Ng, Chi Yung.; Chen, Tupei.; Zhao, P.; Ding, Liang.; Liu, Yang.; Tseng, Ampere A.; Fung, Stevenson Hon Yuen.	Journal Article
2005	Influence of silicon-nanocrystal distribution in SiO2 matrix on charge injection and charge decay.	Tseng, Ampere A.; Ng, Chi Yung.; Chen, Tupei.; Tse, Man Siu.; Fung, Stevenson Hon Yuen.; Lim, Vanissa Sei Wei.	Journal Article
2006	Influence of Si-nanocrystal distribution in the oxide on the charging behavior of MOS structures.	Tseng, Ampere A.; Liu, Yang.; Chen, Tupei.; Ng, Chi Yung.; Ding, Liang.; Tse, Man Siu.; Fung, Stevenson Hon Yuen.	Journal Article
2006	Si ion-induced instability in flatband voltage of Si+ -implanted gate oxides.	Chen, Q.; Zhao, P.; Tseng, Ampere A.; Ng, Chi Yung.; Chen, Tupei.; Ding, Liang.; Liu, Yang.; Fung, Stevenson Hon Yuen.	Journal Article

Now showing items 1-4 of 4