Search DR-NTU

Browse

Now showing items 1-5 of 5

Date	Title	Author	Type
2004	Charging effect on electrical characteristics of MOS structures with Si nanocrystal distribution in gate oxide.	Li, S.; Zhao, P.; Liu, Yang.; Chen, Tupei.; Ng, Chi Yung.; Tse, Man Siu.; Fung, Stevenson Hon Yuen.; Liu, Yu Chan.	Journal Article
2006	Electrical characteristics of Si nanocrystal distributed in a narrow layer in the gate oxide near the gate synthesized with very-low-energy ion beams.	Ng, Chi Yung.; Chen, Tupei.; Zhao, P.; Ding, Liang.; Liu, Yang.; Tseng, Ampere A.; Fung, Stevenson Hon Yuen.	Journal Article
2006	Influence of Si nanocrystal distributed in the gate oxide on the MOS capacitance.	Zhao, P.; Yang, X. H.; Ng, Chi Yung.; Chen, Tupei.; Ding, Liang.; Yang, Ming.; Wong, Jen It.; Tse, Man Siu.; Trigg, Alastair David.; Fung, Stevenson Hon Yuen.	Journal Article
2005	Memory effect of Al-rich AlN films synthesized with rf magnetron sputtering.	Zhao, P.; Liu, Yang.; Chen, Tupei.; Zhang, Sam.; Fu, Yong Qing.; Fung, Stevenson Hon Yuen.	Journal Article
2006	Si ion-induced instability in flatband voltage of Si+ -implanted gate oxides.	Chen, Q.; Zhao, P.; Tseng, Ampere A.; Ng, Chi Yung.; Chen, Tupei.; Ding, Liang.; Liu, Yang.; Fung, Stevenson Hon Yuen.	Journal Article

Now showing items 1-5 of 5