Long-wavelength monolithic gaInNAs vertical-cavity optical amplifiers

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Long-wavelength monolithic gaInNAs vertical-cavity optical amplifiers

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dc.contributor.author Clark, Antony H.
dc.contributor.author Macaluso, Roberto
dc.contributor.author Calvez, Stephane
dc.contributor.author Laurand, N.
dc.contributor.author Sun, Handong
dc.contributor.author Dawson, M. D.
dc.contributor.author Jouhti, Tomi
dc.contributor.author Kontinnen, Janne
dc.contributor.author Markus, Pessa
dc.date.accessioned 2009-04-17T11:38:13Z
dc.date.available 2009-04-17T11:38:13Z
dc.date.copyright 2004
dc.date.issued 2009-04-17T11:38:13Z
dc.identifier.citation Clark, A. H., Macaluso, R., Calvez, S., Laurand, N., Sun, H. D., Dawson, M. D., et al. (2004). Long-wavelength monolithic gaInNAs vertical-cavity optical amplifiers. IEEE Journal of Quantum Electronics, 40(7), 878-883.
dc.identifier.issn 0018-9197
dc.identifier.uri http://hdl.handle.net/10220/4564
dc.description.abstract We report on the continuous-wave amplification characteristics of an optically pumped 1.3-μm multiple-quantum-well GaInNAs-GaAs vertical-cavity semiconductor optical amplifier (VCSOA). The VCSOA structure was monolithically grown by molecular beam epitaxy and operated in reflection mode in a fiber-coupled system. The maximum on-chip gain attained, limited by the onset of laser action, was 15.6 dB at 196 mW of 980-nm pump power. For a chip gain of 10.4 dB, the optical bandwidth was 10.8 GHz and the saturation output power was -9 dBm. By varying the pump laser power, a maximum extinction ratio of 22.3 dB was obtained. Temperature-controlled tuneable operation of the device is also presented and demonstration of 9 dB of chip gain obtained over 9.5 nm with an optical bandwidth of 12 GHz is reported.
dc.language.iso en
dc.relation.ispartofseries IEEE Journal of Quantum Electronics.
dc.rights © 2006 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder.
dc.subject DRNTU::Science::Physics::Optics and light
dc.title Long-wavelength monolithic gaInNAs vertical-cavity optical amplifiers
dc.type Journal Article
dc.contributor.school School of Physical and Mathematical Sciences
dc.description.version Published version

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