100-GHz quasi-yagi antenna in silicon technology

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100-GHz quasi-yagi antenna in silicon technology

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Title: 100-GHz quasi-yagi antenna in silicon technology
Author: Sun, Mei; Zhang, Yue Ping
Copyright year: 2007
Abstract: This letter presents a 100-GHz integrated Quasi-Yagi antenna on silicon substrates of low resistivity 10 Omegamiddotcm. The fabrication was realized with the back-end-of-line process. The characterization was conducted on wafer with Cascade Microtech coplanar probes and an HP8510XF network analyzer. Reflection measurements show a return loss of 8.2 dB at 100 GHz and a -6-dB impedance bandwidth of 89-104 GHz. Gain measurements show a gain of 5.7 dBi at 100 GHz. The simulated radiation patterns are also presented. It is anticipated that the results presented here are useful and inspiring for engineers interested in 100-GHz complementary metal-oxide-semiconductor radio front-end designs.
Subject: DRNTU::Engineering::Electrical and electronic engineering::Antennas, wave guides, microwaves, radar, radio.
Type: Journal Article
Series/ Journal Title: IEEE electron device letters
School: School of Electrical and Electronic Engineering
Rights: © 2006 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder.
Version: Published version

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