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Date	Title	Author	Type
2002	Effect of ion implantation on layer inversion of Ni silicided poly-Si.	Lee, Pooi See.; Pey, Kin Leong.; Mangelinck, D.; Ding, J.; Chi, Dong Zhi.; Osipowicz, T.; Dai, J. Y.; Chan, L.	Journal Article
2007	Effect of low fluence laser annealing on ultrathin Lu2O3 high-k dielectric.	Darmawan, P.; Lee, Pooi See.; Setiawan, Y.; Ma, Jan.; Osipowicz, T.	Journal Article
2009	Lanthanide-based graded barrier structure for enhanced nanocrystal memory properties.	Chan, M. Y.; Chan, T. K.; Osipowicz, T.; Chan, L.; Lee, Pooi See.	Journal Article
2002	Layer inversion of Ni(Pt)Si on mixed phase Si films.	Lee, Pooi See.; Pey, Kin Leong.; Mangelinck, D.; Ding, J.; Osipowicz, T.; See, A.	Journal Article
2008	Lu2O3/Al2O3 gate dielectrics for germanium metal-oxide-semiconductor devices.	Darmawan, P.; Chan, M. Y.; Zhang, T.; Setiawan, Y.; Seng, H. L.; Chan, T. K.; Osipowicz, T.; Lee, Pooi See.	Journal Article
2000	Micro-raman spectroscopy investigation of nickel silicides and nickel (platinum) silicides.	Lee, Pooi See.; Mangelinck, D.; Pey, Kin Leong.; Shen, Z. X.; Ding, J.; Osipowicz, T.; See, A.	Journal Article
2005	On the morphological changes of Ni- and Ni(Pt)-silicides.	Lee, Pooi See.; Pey, Kin Leong.; Mangelinck, D.; Chi, Dong Zhi.; Osipowicz, T.	Journal Article

Now showing items 1-7 of 7