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Effect of BOE etching time on wire bonding quality.

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Effect of BOE etching time on wire bonding quality.

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Title: Effect of BOE etching time on wire bonding quality.
Author: Tan, Cher Ming.; Linggajaya, Kaufik.; Er, Eddie.; Chai, Vincent Siew Heong.
Copyright year: 1999
Abstract: The dependence of wire bond-pull strength on the morphology of the underlying polycrystalline silicon (poly-Si) beneath the bondpad metal is studied using atomic force microscopy(AFM). Statistical analysis shows that the roughness of the poly-Si is correlated with the wire bond-pull strength. The correlation is believed to be due to the effectiveness of thermal dissipation through poly-Si during the wire bonding process. Statistical analysis also shows that the roughness of the poly-Si is correlated to the buffered oxide etch (BOE) etching time before the bondpad metal deposition. In this work, it is concluded that the BOE etching time has a significant effect on the wire bonding quality. The roughness parameter that links the BOE etching time to the wire bond-pull strength is found to be the localization factor.
Subject: DRNTU::Engineering::Electrical and electronic engineering.
Type: Journal Article
Series/ Journal Title: IEEE transactions on components and packaging technology
School: School of Electrical and Electronic Engineering
Rights: © 1999 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder. http://www.ieee.org/portal/site.
Version: Published version

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