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Title:
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Experimentally-based analytical model of deep-submicron LDD pMOSFET’s in a Bi-MOS hybrid-mode environment.
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Author:
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Rofail, Samir S.; Yeo, Kiat Seng.
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Copyright year:
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1997 |
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Abstract:
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The hybrid-mode operation of deep-submicron LDD pMOSFET’s has been investigated experimentally. Based on the experimental results, analytical models for the threshold voltage, the device currents, the transconductance, and the output conductance were derived. The various current components in this mode of operation were extracted and identified. The effects of independently biasing the source, drain, gate, and body potentials on the device currents and parameters were examined. The bodyinduced-barrier-lowering (BIBL) effect, which is one of the VSB effects and introduced for the first time, has been used to account for the changes in both the threshold voltage and the device currents caused by the forward source-body bias. |
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Subject:
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DRNTU::Engineering::Electrical and electronic engineering. |
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Type:
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Journal Article |
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Series/ Journal Title:
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IEEE transactions on electron devices |
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School:
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School of Electrical and Electronic Engineering |
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Rights:
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© 2000 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder. http://www.ieee.org/portal/site. |
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Version:
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Published version |
