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Current crowding effect on copper dual damascene via bottom failure for ULSI applications

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Current crowding effect on copper dual damascene via bottom failure for ULSI applications

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dc.contributor.author Tan, Cher Ming
dc.contributor.author Arijit, Roy
dc.contributor.author Vairagar, A. V.
dc.contributor.author Krishnamoorthy, Ahila
dc.contributor.author Mhaisalkar, Subodh Gautam
dc.date.accessioned 2009-06-22T07:56:45Z
dc.date.available 2009-06-22T07:56:45Z
dc.date.copyright 2005
dc.date.issued 2009-06-22T07:56:45Z
dc.identifier.citation Tan, C. M., Arijit, R., Vairagar, A. V., Krishnamoorthy, A., & Mhaisalkar, S. G. (2005). Current crowding effect on copper dual damascene via bottom failure for ULSI applications. IEEE Transactions on Device and Materials Reliability, 5(2), 198-205.
dc.identifier.issn 1530-4388
dc.identifier.uri http://hdl.handle.net/10220/4644
dc.description.abstract Reliability of interconnect via is increasing an important issue in submicron technology. Electromigration experiments are performed on line/via structures in two level Cu dual damascene interconnection system and it is found that wide line/via fails earlier than the narrow line/via. Atomic flux divergence based finite element analyses is performed and stress-migration is found to be important in the failure rate behavior observed. Semi-classical width dependence Black’s equation together with the finite element analysis revealed that the difference in the time to failure is due to the much larger average current density along the interface between the line and via for the wide line/via structure, and good agreement is obtained between the simulation and experimental results.
dc.format.extent 8 p.
dc.language.iso en
dc.relation.ispartofseries IEEE transactions on device and materials reliability
dc.rights © 2005 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder. http://www.ieee.org/portal/site.
dc.subject DRNTU::Engineering::Electrical and electronic engineering.
dc.title Current crowding effect on copper dual damascene via bottom failure for ULSI applications
dc.type Journal Article
dc.contributor.school School of Electrical and Electronic Engineering
dc.identifier.doi http://dx.doi.org/10.1109/TDMR.2005.846830
dc.description.version Published version

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