CMOS T/R switch design : towards ultra-wideband and higher frequency

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CMOS T/R switch design : towards ultra-wideband and higher frequency

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dc.contributor.author Li, Qiang
dc.contributor.author Zhang, Yue Ping
dc.date.accessioned 2009-06-22T08:49:47Z
dc.date.available 2009-06-22T08:49:47Z
dc.date.copyright 2007
dc.date.issued 2009-06-22T08:49:47Z
dc.identifier.citation Li, Q., & Zhang, Y. P. (2007). CMOS T/R switch design : towards ultra-wideband and higher frequency. IEEE Journal of Solid-State Circuits, 42(3), 563-570.
dc.identifier.issn 0018-9200
dc.identifier.uri http://hdl.handle.net/10220/4646
dc.description.abstract This paper presents the comprehensive considerations of CMOS transmit/receive (T/R) switch design towards ultra-wideband and over 15-GHz frequencies. Techniques for minimizing parasitics and increasing linearity are discussed. A customized transistor layout is proposed for T/R switch design and its effects on insertion loss and isolation are studied. The analysis shows that a series-only architecture using the customized transistor layout achieves better insertion loss and reasonable isolation. A double-well body-floating technique is proposed and its effects are discussed. A differential switch architecture without shunt arms is designed and verified by experimental results. Fabricated in 0.13- m triple-well CMOS, the T/R switch exhibits less than 2 dB insertion loss and higher than 21 dB isolation up to 20 GHz. With resistive body floating and differential architecture, the high linearity is of ultra-wideband characteristic, more than 30-dBm power 1-dB compression point (P1dB) is obtained up to 20 GHz in only 0.03 mm2 active die area.
dc.format.extent 8 p.
dc.language.iso en
dc.relation.ispartofseries IEEE journal of solid-state circuits
dc.rights © 2007 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder. http://www.ieee.org/portal/site.
dc.subject DRNTU::Engineering::Electrical and electronic engineering.
dc.title CMOS T/R switch design : towards ultra-wideband and higher frequency
dc.type Journal Article
dc.contributor.school School of Electrical and Electronic Engineering
dc.identifier.doi http://dx.doi.org/10.1109/JSSC.2006.891442
dc.description.version Published version

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