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Failure analysis of bond pad metal peeling using FIB and AFM

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Failure analysis of bond pad metal peeling using FIB and AFM

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Title: Failure analysis of bond pad metal peeling using FIB and AFM
Author: Tan, Cher Ming; Er, Eddie; Hua, Younan; Chai, Vincent Siew Heong
Copyright year: 1998
Abstract: Aluminum bond pads on semiconductor chips play an important role in chips functionality and reliability. Bond pad peeling during wire bonding process results in yield reduction. The failure mechanisms of the peeling must be identified so that potential reliability problem of poor bond pad adhesion can be avoided. In this work, FIB, SEM, EDX, and AFM are used to identify the root causes of the peeling. The possible root causes are found to be the presence of an extra layer of thickness of 0.14 µm and the poly-silicon surface roughness asperity due to prolonged BOE etching time.
Subject: DRNTU::Engineering::Electrical and electronic engineering.
Type: Journal Article
Series/ Journal Title: IEEE transactions on components, packaging, and manufacturing technology-part A
School: School of Electrical and Electronic Engineering
Rights: © 1998 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder. http://www.ieee.org/portal/site.
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