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A CMOS ISFET interface circuit with dynamic current temperature compensation technique

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A CMOS ISFET interface circuit with dynamic current temperature compensation technique

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dc.contributor.author Chan, Pak Kwong
dc.contributor.author Chen, D. Y.
dc.date.accessioned 2009-06-23T04:44:23Z
dc.date.available 2009-06-23T04:44:23Z
dc.date.copyright 2007
dc.date.issued 2009-06-23T04:44:23Z
dc.identifier.citation Chan, P. K. & Chen, D. Y. (2007). A CMOS ISFET interface circuit with dynamic current temperature compensation technique. IEEE Transactions on Circuits and Systems - I: Regular Papers, 54(1), 119-129.
dc.identifier.issn 1057-7122
dc.identifier.uri http://hdl.handle.net/10220/4660
dc.description.abstract This paper presents a new ion-sensitive field-effect transistor (ISFET ) readout circuit including a novel nonlinear temperature compensation method that is based on the theoretical work for formulating a body-effect-based ISFET drain current expression, the derivation of an unified temperature-dependent ISFET threshold voltage expression, and the use of iterative method for solving design parameters in nonlinear equations. Regarding the basic readout circuit, it comprises only one source follower and one current source to establish a self-biased configuration for a single ISFET device. Due to elimination of body effect, it displays linear transfer characteristic in the experimental result. Incorporating temperature compensation further improves the thermal stability of the ISFET device in pH sensing function. This has been validated by the experimental results on pH values ranging from 4 to 9 in a temperature range of 22 C to 50 C from the measurement setup. The pH7 parameter is used as a reference in the method. The proposed works are attractive in terms of circuit simplicity, temperature-compensated performance, cost and compatibility for smart sensor operation.
dc.format.extent 11 p.
dc.language.iso en
dc.relation.ispartofseries IEEE transactions on circuits and systems - I : regular papers
dc.rights © 2007 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder. http://www.ieee.org/portal/site.
dc.subject DRNTU::Engineering::Electrical and electronic engineering
dc.title A CMOS ISFET interface circuit with dynamic current temperature compensation technique
dc.type Journal Article
dc.contributor.school School of Electrical and Electronic Engineering
dc.identifier.doi http://dx.doi.org/10.1109/TCSI.2006.887977
dc.description.version Published version

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