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A temperature-dependent DC model for quarter-micron LDD pMOSFET’s operating in a Bi-MOS structure

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A temperature-dependent DC model for quarter-micron LDD pMOSFET’s operating in a Bi-MOS structure

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dc.contributor.author Chew, Kok Wai Johnny
dc.contributor.author Rofail, Samir S.
dc.contributor.author Yeo, Kiat Seng
dc.date.accessioned 2009-06-23T06:49:23Z
dc.date.available 2009-06-23T06:49:23Z
dc.date.copyright 1999
dc.date.issued 2009-06-23T06:49:23Z
dc.identifier.citation Chew, K. W. J., Rofail, S. S., & Yeo, K. S. (1999). A temperature-dependent DC model for quarter-micron LDD pMOSFET’s operating in a Bi-MOS structure. IEEE Transactions on Electron Devices, 46(8), 1672-1684.
dc.identifier.issn 0018-9383
dc.identifier.uri http://hdl.handle.net/10220/4664
dc.description.abstract A temperature-dependent analytical model for deep submicrometer LDD p-channel devices operating in a Bi-MOS structure is reported for the first time. This model is based on experimental data obtained from 0.25-µm process wafers with a wide range of technologies (0.25–1.0µm). The measurements have been performed within the temperature range 223–398 K (50C to +125C). The model accounts for the effects of independently biasing the source, drain, gate and body potentials, scaling, and the influence of temperature on the threshold voltage and the device currents. The effect of temperature on the device transconductance and the output conductance have also been examined. The results revealed that close agreement between the analytical model and the experimental has been achieved. Comparisons between the principal MOS current and the lateral bipolar current have been made to demonstrate the improvement of the latter with temperature for the quarter-micron devices.
dc.format.extent 13 p.
dc.language.iso en
dc.relation.ispartofseries IEEE transactions on electron devices
dc.rights © 1999 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder. http://www.ieee.org/portal/site.
dc.subject DRNTU::Engineering::Electrical and electronic engineering.
dc.title A temperature-dependent DC model for quarter-micron LDD pMOSFET’s operating in a Bi-MOS structure
dc.type Journal Article
dc.contributor.school School of Electrical and Electronic Engineering
dc.identifier.doi http://dx.doi.org/10.1109/16.777156
dc.description.version Published version

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