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The manufacture and performance of diodes made in dielectrically isolated silicon substrates containing buried metallic layers

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The manufacture and performance of diodes made in dielectrically isolated silicon substrates containing buried metallic layers

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dc.contributor.author Goh, Wang Ling
dc.contributor.author Raza, S. H.
dc.contributor.author Montgomery, J. H.
dc.contributor.author Armstrong, B. M.
dc.contributor.author Gamble, H. S.
dc.date.accessioned 2009-08-03T01:27:30Z
dc.date.available 2009-08-03T01:27:30Z
dc.date.copyright 1999
dc.date.issued 2009-08-03T01:27:30Z
dc.identifier.citation Goh, W. L., Raza, S. H., Montgomery, J. H., Armstrong, B. M., & Gamble, H. S. (1999). The manufacture and performance of diodes made in dielectrically isolated silicon substrates containing buried metallic layers. IEEE Electron Device Letters, 20(5), 212-214.
dc.identifier.issn 0741-3106
dc.identifier.uri http://hdl.handle.net/10220/5989
dc.description.abstract Results are reported on the performance of diffused p+n diode structures manufactured on a novel silicon-on-metalon-insulator (SMI) substrate. This substrate consists of a thin single crystal silicon layer on top of a tungsten disilicide covered oxidized silicon wafer. The diodes show excellent characteristics with an exponential current–voltage (I􀀀V ) relationship over nine orders of magnitude and an ideality factor of 1.005, under forward bias conditions. The reverse leakage current is low with a minority carrier lifetime of typically 500 µs. The diodes show no evidence of stress induced defects or degraded performance due to W migration during processing. The SMI substrate is therefore shown to be compatible with standard manufacturing processes.
dc.format.extent 3 p.
dc.language.iso en
dc.relation.ispartofseries IEEE electron device letters
dc.rights IEEE Electron Device Letters © 1999 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder. http://www.ieee.org/portal/site.
dc.subject DRNTU::Engineering::Electrical and electronic engineering
dc.title The manufacture and performance of diodes made in dielectrically isolated silicon substrates containing buried metallic layers
dc.type Journal Article
dc.contributor.school School of Electrical and Electronic Engineering
dc.identifier.doi http://dx.doi.org/10.1109/55.761018
dc.description.version Published version

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