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Novel RF process monitoring test structure for silicon devices.

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Title: Novel RF process monitoring test structure for silicon devices.
Author: Sia, Choon Beng.; Ong, Beng Hwee.; Lim, Kok Meng.; Yeo, Kiat Seng.; Do, Manh Anh.; Ma, Jianguo.; Alam, Tariq.
Copyright year: 2005
Abstract: This paper demonstrates a novel RFCMOS process monitoring test structure. Outstanding agreement in dc and radio frequency (RF) characteristics has been observed between conventional test structure and the new process monitoring test structure for MOSFET with good correlations in measured capacitances also noted for metal-insulator-metal capacitor and MOS varactor. Possible process monitoring test structure is also suggested as a reference benchmarking indicator for interconnects.
Type: Journal Article
Series/ Journal Title: IEEE transactions on semiconductor manufacturing
School: School of Electrical and Electronic Engineering
Rights: IEEE Transactions on Semiconductor Manufacturing © 2005 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder. http://www.ieee.org/portal/site.
Version: Published version

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