mirage

Novel RF process monitoring test structure for silicon devices.

DSpace/Manakin Repository

 

Search DR-NTU


Advanced Search Subject Search

Browse

My Account

Novel RF process monitoring test structure for silicon devices.

Show simple item record

dc.contributor.author Sia, Choon Beng
dc.contributor.author Ong, Beng Hwee
dc.contributor.author Lim, Kok Meng
dc.contributor.author Yeo, Kiat Seng
dc.contributor.author Do, Manh Anh
dc.contributor.author Ma, Jianguo
dc.contributor.author Alam, Tariq
dc.date.accessioned 2009-08-03T01:34:55Z
dc.date.available 2009-08-03T01:34:55Z
dc.date.copyright 2005
dc.date.issued 2009-08-03T01:34:55Z
dc.identifier.citation Sia, C. B., Ong, B. H., Lim, K. M., Yeo, K. S., Do, M. A., Ma, J. G., et al. (2005). Novel RF process monitoring test structure for silicon devices. IEEE Transactions on Semiconductor Manufacturing, 18(2), 246-253.
dc.identifier.issn 0894-6507
dc.identifier.uri http://hdl.handle.net/10220/5990
dc.description.abstract This paper demonstrates a novel RFCMOS process monitoring test structure. Outstanding agreement in dc and radio frequency (RF) characteristics has been observed between conventional test structure and the new process monitoring test structure for MOSFET with good correlations in measured capacitances also noted for metal-insulator-metal capacitor and MOS varactor. Possible process monitoring test structure is also suggested as a reference benchmarking indicator for interconnects.
dc.format.extent 9 p.
dc.language.iso en
dc.relation.ispartofseries IEEE transactions on semiconductor manufacturing
dc.rights IEEE Transactions on Semiconductor Manufacturing © 2005 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder. http://www.ieee.org/portal/site.
dc.title Novel RF process monitoring test structure for silicon devices.
dc.type Journal Article
dc.contributor.school School of Electrical and Electronic Engineering
dc.identifier.doi http://dx.doi.org/10.1109/TSM.2005.845095
dc.description.version Published version

Files in this item

Files Size Format View Description
Novel RF Proces ... re For Silicon Devices.pdf 2.033Mb PDF View/Open Published

This item appears in the following Collection(s)

Show simple item record

Statistics

Total views

All Items Views
Novel RF process monitoring test structure for silicon devices. 346

Total downloads

All Bitstreams Views
Novel RF Process Monitoring Test Structure For Silicon Devices.pdf 509

Top country downloads

Country Code Views
United States of America 180
China 93
Germany 31
India 29
Singapore 18

Top city downloads

city Views
Mountain View 107
Beijing 50
New Delhi 17
Singapore 16
Kiez 13

Downloads / month

  2014-08 2014-09 2014-10 total
Novel RF Process Monitoring Test Structure For Silicon Devices.pdf 0 0 11 11