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Comments on “Negative capacitance effect in semiconductor devices”

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Comments on “Negative capacitance effect in semiconductor devices”

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dc.contributor.author Ma, Jianguo
dc.contributor.author Yeo, Kiat Seng
dc.contributor.author Do, Manh Anh
dc.date.accessioned 2009-08-03T05:59:35Z
dc.date.available 2009-08-03T05:59:35Z
dc.date.copyright 1999
dc.date.issued 2009-08-03T05:59:35Z
dc.identifier.citation Ma, J. G., Yeo, K. S., & Do, M. A. (1999). Comments on “Negative capacitance effect in semiconductor devices”. IEEE Transactions on Electron Devices, 46(12), 2357-2358.
dc.identifier.issn 0018-9383
dc.identifier.uri http://hdl.handle.net/10220/6015
dc.description.abstract Capacitors play a very important role in the modeling of semiconductor devices. Without a good understanding and accurate model for the capacitance characteristics, one cannot model devices very well. The conventional equivalent circuit models of devices, such as MOSFET’s, MESFET’s, HEMT’s, and so on, are constructed mainly by using capacitors and resistors together with a voltage-controlled current-source. For fitting the measured terminal behaviors of a device, negative capacitances are often used. In the above paper,1 the authors tried to interpret the negative capacitance (NC) phenomenon theoretically in physics. However, we find some points in the above paper are arguable.
dc.format.extent 2 p.
dc.language.iso en
dc.relation.ispartofseries IEEE transactions on electron devices
dc.rights IEEE Transactions on Electron Devices © 1999 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder. http://www.ieee.org/portal/site.
dc.subject DRNTU::Engineering::Electrical and electronic engineering.
dc.title Comments on “Negative capacitance effect in semiconductor devices”
dc.type Journal Article
dc.contributor.school School of Electrical and Electronic Engineering
dc.identifier.doi http://dx.doi.org/10.1109/16.808085
dc.description.version Published version

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