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Effect of multi-layer barriers on the optical properties of GaInNAs single quantum-well structures grown by metal-organic vapor phase epitaxy

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Effect of multi-layer barriers on the optical properties of GaInNAs single quantum-well structures grown by metal-organic vapor phase epitaxy

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Title: Effect of multi-layer barriers on the optical properties of GaInNAs single quantum-well structures grown by metal-organic vapor phase epitaxy
Author: Sun, Handong; Clark, Antony H.; Calvez, Stephane; Dawson, M. D.; Kim, K. S.; Kim, T.; Park, Y. J.
Copyright year: 2005
Abstract: We report on the effects of combined strain-compensating and strain-mediating layers of various widths on the optical properties of 1.3 mu m GaInNAs/GaAs single quantum well structures grown by metalorganic vapor phase epitaxy (MOVPE). While the emission wavelength of GaInNAs/GaAs quantum wells can be redshifted by the adoption of strain-compensated GaNAs layers, the material quality is degraded by the increased stress at the well/barrier interface. This detrimental effect can be cured by inserting a strain-mediating InGaAs layer between them. Contrary to what is expected, however, the emission wavelength is blueshifted by the insertion of the InGaAs layer, which is attributed to the reduced N incorporation due to the improved interface quality. Our results indicate that the optical properties of MOVPE-grown GaInNAs/GaAs quantum wells can be optimized in quantum efficiency and emission wavelength by combination of strain-compensating and strain-mediating layers with suitable characteristics. (c) 2005 American Institute of Physics.
Subject: DRNTU::Science::Physics::Optics and light.
Type: Journal Article
Series/ Journal Title: Applied physics letters
School: School of Physical and Mathematical Sciences
Rights: Applied Physics Letters © copyright 2005 American Institute of Physics. The journal's website is located at http://apl.aip.org/.
Version: Published version

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