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Effect of multi-layer barriers on the optical properties of GaInNAs single quantum-well structures grown by metal-organic vapor phase epitaxy

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Effect of multi-layer barriers on the optical properties of GaInNAs single quantum-well structures grown by metal-organic vapor phase epitaxy

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dc.contributor.author Sun, Handong
dc.contributor.author Clark, Antony H.
dc.contributor.author Calvez, Stephane
dc.contributor.author Dawson, M. D.
dc.contributor.author Kim, K. S.
dc.contributor.author Kim, T.
dc.contributor.author Park, Y. J.
dc.date.accessioned 2009-08-12T01:23:19Z
dc.date.available 2009-08-12T01:23:19Z
dc.date.copyright 2005
dc.date.issued 2009-08-12T01:23:19Z
dc.identifier.citation Sun, H. D., Clark, A. H., Calvez, S., Dawson, M. D., Kim, K. S., Kim, T., et al. (2005). Effect of multi-layer barriers on the optical properties of GaInNAs single quantum-well structures grown by metal-organic vapor phase epitaxy. Applied Physics Letters, 87(2).
dc.identifier.issn 0003-6951
dc.identifier.uri http://hdl.handle.net/10220/6045
dc.description.abstract We report on the effects of combined strain-compensating and strain-mediating layers of various widths on the optical properties of 1.3 mu m GaInNAs/GaAs single quantum well structures grown by metalorganic vapor phase epitaxy (MOVPE). While the emission wavelength of GaInNAs/GaAs quantum wells can be redshifted by the adoption of strain-compensated GaNAs layers, the material quality is degraded by the increased stress at the well/barrier interface. This detrimental effect can be cured by inserting a strain-mediating InGaAs layer between them. Contrary to what is expected, however, the emission wavelength is blueshifted by the insertion of the InGaAs layer, which is attributed to the reduced N incorporation due to the improved interface quality. Our results indicate that the optical properties of MOVPE-grown GaInNAs/GaAs quantum wells can be optimized in quantum efficiency and emission wavelength by combination of strain-compensating and strain-mediating layers with suitable characteristics. (c) 2005 American Institute of Physics.
dc.format.extent 3 p.
dc.language.iso en
dc.relation.ispartofseries Applied physics letters
dc.rights Applied Physics Letters © copyright 2005 American Institute of Physics. The journal's website is located at http://apl.aip.org/.
dc.subject DRNTU::Science::Physics::Optics and light.
dc.title Effect of multi-layer barriers on the optical properties of GaInNAs single quantum-well structures grown by metal-organic vapor phase epitaxy
dc.type Journal Article
dc.contributor.school School of Physical and Mathematical Sciences
dc.identifier.openurl http://sfxna09.hosted.exlibrisgroup.com:3410/ntu/sfxlcl3?sid=metalib:EBSCO_APH&id=doi:&genre=&isbn=&issn=00036951&date=2005&volume=87&issue=2&spage=021903&epage=&aulast=Sun&aufirst=%20H%20%20D&auinit=&title=Applied%20Physics%20Letters&atitle=Effect%20of%20multilayer%20barriers%20on%20the%20optical%20properties%20of%20GaInNAs%20single%20quantum%2Dwell%20structures%20grown%20by%20metalorganic%20vapor%20phase%20epitaxy%2E&sici.
dc.identifier.doi http://dx.doi.org/10.1063/1.1993758.
dc.description.version Published version

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