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Investigation of phase-separated electronic states in 1.5 µm GaInNAs/GaAs heterostructures by optical spectroscopy

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Investigation of phase-separated electronic states in 1.5 µm GaInNAs/GaAs heterostructures by optical spectroscopy

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dc.contributor.author Sun, Handong
dc.contributor.author Clark, Antony H.
dc.contributor.author Calvez, Stephane
dc.contributor.author Dawson, M. D.
dc.contributor.author Gilet, P.
dc.contributor.author Grenouillet, L.
dc.contributor.author Million, A.
dc.date.accessioned 2009-08-12T02:24:54Z
dc.date.available 2009-08-12T02:24:54Z
dc.date.copyright 2005.
dc.date.issued 2009-08-12T02:24:54Z
dc.identifier.citation Sun, H. D., Clark, A. H., Calvez, S., Dawson, M. D., Gilet, P., Grenouillet, L., et al. (2005). Investigation of phase-separated electronic states in 1.5 mm GaInNAs/GaAs heterostructures by optical spectroscopy. Journal of Applied Physics, 97(3).
dc.identifier.issn 0021-8979
dc.identifier.uri http://hdl.handle.net/10220/6050
dc.description.abstract We report on the comparative electronic state characteristics of particular GalnNAs/GaAs quantum well structures that emit near 1.3 and 1.5 μm wavelength at room temperature. While the electronic structure of the 1.3 μm sample is consistent with a standard quantum well, the 1.5 μm sample demonstrate quite different characteristics. By using photoluminescence (PL) excitation spectroscopy at various detection wavelengths, we demonstrate that the macroscopic electronic states in the 1.5 μm structures originate from phase-separated quantum dots instead of quantum wells. PL measurements with spectrally selective excitation provide further evidence for the existence of composition-separated phases. The evidence is consistent with phase segregation during the growth leading to two phases, one with high In and N content which accounts for the efficient low energy 1.5 μm emission, and the other one having lower In and N content which contributes metastable states and only emits under excitation in a particular wavelength range.
dc.format.extent 5 p.
dc.language.iso en
dc.relation.ispartofseries Journal of applied physics
dc.rights Journal of Applied Physics © copyright 2005 American Institute of Physics. The journal's website is located at http://jap.aip.org/.
dc.subject DRNTU::Science::Physics::Optics and light.
dc.title Investigation of phase-separated electronic states in 1.5 µm GaInNAs/GaAs heterostructures by optical spectroscopy
dc.type Journal Article
dc.contributor.school School of Physical and Mathematical Sciences
dc.identifier.openurl http://sfxna09.hosted.exlibrisgroup.com:3410/ntu/sfxlcl3?url_ver=Z39.88-2004&ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rft.object_id=954922836225&sfx.request_id=787993&sfx.ctx_obj_item=0.
dc.identifier.doi http://dx.doi.org/10.1063/1.1836856.
dc.description.version Published version

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