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Spectroscopic characterization of 1.3 μm GaInNAs quantum well structures grown by metal-organical vapour phase epm,itaxy

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Spectroscopic characterization of 1.3 μm GaInNAs quantum well structures grown by metal-organical vapour phase epm,itaxy

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Title: Spectroscopic characterization of 1.3 μm GaInNAs quantum well structures grown by metal-organical vapour phase epm,itaxy
Author: Sun, Handong; Clark, Antony H.; Calvez, Stephane; Dawson, M. D.; Qiu, Y. N.; Rorison, J. M.; Kim, K. S.; Kim, T.; Park, Y. J.
Copyright year: 2005
Abstract: We report optical studies of high-quality 1.3 μm strain-compensated GaInNAs/GaAs single-quantum-well structures grown by metalorganic vapor phase epitaxy. Photoluminescence excitation sPLEd spectroscopy shows clearly the electronic structure of the two-dimensional quantum well. The transition energies between quantized states of the electrons and holes are in agreement with theoretical calculations based on the band anti-crossing model in which the localized N states interact with the extended states in the conduction band. We also investigated the polarization properties of the luminescence by polarized edge-emission measurements. Luminescence bands with different polarization characters arising from the electron to heavy-hole and light-hole transitions, respectively, have been identified and verify the transition assignment observed in the PLE spectrum.
Subject: DRNTU::Science::Physics::Optics and light.
Type: Journal Article
Series/ Journal Title: Applied Physics Letters.
School: School of Physical and Mathematical Sciences
Rights: Applied Physics Letters © copyright 2005 American Institute of Physics. The journal's website is located at http://apl.aip.org/.
Version: Published version

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