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Spectroscopic characterization of 1.3 μm GaInNAs quantum well structures grown by metal-organical vapour phase epm,itaxy

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Spectroscopic characterization of 1.3 μm GaInNAs quantum well structures grown by metal-organical vapour phase epm,itaxy

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dc.contributor.author Sun, Handong
dc.contributor.author Clark, Antony H.
dc.contributor.author Calvez, Stephane
dc.contributor.author Dawson, M. D.
dc.contributor.author Qiu, Y. N.
dc.contributor.author Rorison, J. M.
dc.contributor.author Kim, K. S.
dc.contributor.author Kim, T.
dc.contributor.author Park, Y. J.
dc.date.accessioned 2009-08-12T02:33:19Z
dc.date.available 2009-08-12T02:33:19Z
dc.date.copyright 2005
dc.date.issued 2009-08-12T02:33:19Z
dc.identifier.citation Sun, H. D., Clark, A. H., Calvez, S. , Dawson, M. D., Qiu, Y. N., Rorison, J. M., et al. (2005). Spectroscopic characterization of 1.3 mm GaInNAs quantum well structures grown by metal-organical vapour phase epitaxy. Applied Physics Letters, 86(9), 1-3.
dc.identifier.issn 0003-6951
dc.identifier.uri http://hdl.handle.net/10220/6051
dc.description.abstract We report optical studies of high-quality 1.3 μm strain-compensated GaInNAs/GaAs single-quantum-well structures grown by metalorganic vapor phase epitaxy. Photoluminescence excitation sPLEd spectroscopy shows clearly the electronic structure of the two-dimensional quantum well. The transition energies between quantized states of the electrons and holes are in agreement with theoretical calculations based on the band anti-crossing model in which the localized N states interact with the extended states in the conduction band. We also investigated the polarization properties of the luminescence by polarized edge-emission measurements. Luminescence bands with different polarization characters arising from the electron to heavy-hole and light-hole transitions, respectively, have been identified and verify the transition assignment observed in the PLE spectrum.
dc.format.extent 3 p.
dc.language.iso en
dc.relation.ispartofseries Applied Physics Letters.
dc.rights Applied Physics Letters © copyright 2005 American Institute of Physics. The journal's website is located at http://apl.aip.org/.
dc.subject DRNTU::Science::Physics::Optics and light.
dc.title Spectroscopic characterization of 1.3 μm GaInNAs quantum well structures grown by metal-organical vapour phase epm,itaxy
dc.type Journal Article
dc.contributor.school School of Physical and Mathematical Sciences
dc.identifier.openurl http://sfxna09.hosted.exlibrisgroup.com:3410/ntu/sfxlcl3?sid=metalib:EBSCO_APH&id=doi:&genre=&isbn=&issn=00036951&date=2005&volume=86&issue=9&spage=092106&epage=&aulast=Sun&aufirst=%20H%20%20D&auinit=&title=Applied%20Physics%20Letters&atitle=Spectroscopic%20characterization%20of%201%2E3%20%26mu%3Bm%20GaInNAs%20quantum%2Dwell%20structures%20grown%20by%20metal%2Dorganic%20vapor%20phase%20epitaxy%2E&sici.
dc.identifier.doi http://dx.doi.org/10.1063/1.1868866
dc.description.version Published version

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