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Thermal quenching mechanism of photoluminescence in 1.55 mu m GaInNAsSb/Ga(N)As quantum-well structures

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Thermal quenching mechanism of photoluminescence in 1.55 mu m GaInNAsSb/Ga(N)As quantum-well structures

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dc.contributor.author Sun, Handong
dc.contributor.author Calvez, Stephane
dc.contributor.author Dawson, M. D.
dc.contributor.author Gupta, J. A.
dc.contributor.author Aers, G. C.
dc.contributor.author Sproule, G. I.
dc.date.accessioned 2009-08-12T03:21:45Z
dc.date.available 2009-08-12T03:21:45Z
dc.date.copyright 2006
dc.date.issued 2009-08-12T03:21:45Z
dc.identifier.citation Sun, H. D., Calvez, S., Dawson, M. D., Gupta, J. A., Aers, G. C., & Sproule, G. I. (2006). Thermal quenching mechanism of photoluminescence in 1.55 mm GaInNAsSb /Ga(N)As quantum-well structures. Applied Physics Letters, 89(10), 1-3.
dc.identifier.issn 0003-6951
dc.identifier.uri http://hdl.handle.net/10220/6057
dc.description.abstract The authors report the temperature dependent photoluminescence characteristics of a series of GaInNAsSb/Ga(N)As double quantum wells which all emit at 1.5-1.55 mu m at room temperature and whose design is such that the quantum wells have nominally identical valence band profiles but show different confinement depth in the conduction band. The photoluminescence quenching at high temperature demonstrates a thermal activation energy independent of the conduction band offset and can be most plausibly attributed to the unipolar thermalization of holes from the quantum wells to the barriers. This effect will intrinsically limit the flexibility of heterostructure design using GaInNAs(Sb), as it would for any other material system with small valence band offset. (c) 2006 American Institute of Physics.
dc.format.extent 3 p.
dc.language.iso en
dc.relation.ispartofseries Applied Physics Letters.
dc.rights Applied Physics Letters © copyright 2006 American Institute of Physics. The journal's website is located at http://apl.aip.org/.
dc.subject DRNTU::Science::Physics::Optics and light.
dc.title Thermal quenching mechanism of photoluminescence in 1.55 mu m GaInNAsSb/Ga(N)As quantum-well structures
dc.type Journal Article
dc.contributor.school School of Physical and Mathematical Sciences
dc.identifier.openurl http://sfxna09.hosted.exlibrisgroup.com:3410/ntu/sfxlcl3?sid=metalib:ELSEVIER_SCOPUS&id=doi:&genre=&isbn=&issn=&date=2006&volume=89&issue=10&spage=&epage=&aulast=Sun&aufirst=%20H%20D&auinit=&title=Applied%20Physics%20Letters&atitle=Thermal%20quenching%20mechanism%20of%20photoluminescence%20in%201%2E55%20%CE%BCm%20GalnNAsSb%2FGa%28N%29As%20quantum%2Dwell%20structures&sici.
dc.identifier.doi http://dx.doi.org/10.1063/1.2345240
dc.description.version Published version

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