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Influence of composition diffusion on the band structures of InGaNAs/GaAs quantum wells investigated by the band-anticrossing model

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Influence of composition diffusion on the band structures of InGaNAs/GaAs quantum wells investigated by the band-anticrossing model

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dc.contributor.author Qiu, Y. N.
dc.contributor.author Rorison, J. M.
dc.contributor.author Sun, Handong
dc.contributor.author Calvez, Stephane
dc.contributor.author Dawson, M. D.
dc.contributor.author Bryce, A. C.
dc.date.accessioned 2009-08-12T03:26:32Z
dc.date.available 2009-08-12T03:26:32Z
dc.date.copyright 2005
dc.date.issued 2009-08-12T03:26:32Z
dc.identifier.citation Qiu, Y. N., Rorison, J. M., Sun, H. D., Calvez, S, Dawson, M. D., & Bryce A. C. (2005). Influence of composition diffusion on the band structures of InGaNAs/GaAs quantum wells investigated by the band-anticrossing model. Applied Physics Letters, 87(23), 1-3.
dc.identifier.issn 0003-6951
dc.identifier.uri http://hdl.handle.net/10220/6058
dc.description.abstract We investigate the influence of quantum-well intermixing (QWI) on the electronic band structure of GaInNAs/GaAs multiquantum wells. The band structures and optical transitions have been calculated based on the band-anticrossing (BAC) model and Fick's interdiffusion law for both intermixed and nonintermixed samples, respectively. The calculated results are consistent with the true optical transitions observed by photoluminescence excitation spectroscopy and secondary ion mass spectroscopy. Our investigation indicates that BAC model is valid for interdiffused quantum wells and verifies that the QWI process in GaInNAs/GaAs multiquantum wells is induced mainly by the interdiffusion of In-Ga between the quantum wells and barriers.
dc.format.extent 3 p.
dc.language.iso en
dc.relation.ispartofseries Applied physics letters
dc.rights Applied Physics Letters © copyright 2005 American Institute of Physics. The journal's website is located at http://apl.aip.org/.
dc.subject DRNTU::Science::Physics::Optics and light.
dc.title Influence of composition diffusion on the band structures of InGaNAs/GaAs quantum wells investigated by the band-anticrossing model
dc.type Journal Article
dc.contributor.school School of Physical and Mathematical Sciences
dc.identifier.openurl http://sfxna09.hosted.exlibrisgroup.com:3410/ntu/sfxlcl3?sid=metalib:EBSCO_APH&id=doi:&genre=&isbn=&issn=00036951&date=2005&volume=87&issue=23&spage=231112&epage=&aulast=Qiu&aufirst=%20Y%20%20N&auinit=&title=Applied%20Physics%20Letters&atitle=Influence%20of%20composition%20diffusion%20on%20the%20band%20structures%20of%20InGaNAs%2FGaAs%20quantum%20wells%20investigated%20by%20the%20band%2Danticrossing%20model%2E&sici.
dc.identifier.doi http://dx.doi.org/10.1063/1.2138350
dc.description.version Published version

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