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Title:
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Photoluminescence characterization of midinfrared InNxAs1-x/In0.53Ga0.47As/InP multiquantum wells with various N contents.
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Author:
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Sun, Handong.; Clark, Antony H.; Calvez, Stephane.; Dawson, M. D.; Shih, D. K.; Lin, H. H.
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Copyright year:
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2005 |
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Abstract:
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We report the temperature-dependent photoluminescence characterization of InNxAs1-x/In0.53Ga0.47As/InP multiple quantum wells with various N contents emitting in the midinfrared wavelength range. The emission wavelength in this material system can be tuned by the N content, but the bowing effect is much weaker than in GaNAs. The correlation between the optical properties and the interface quality is demonstrated by examining the barrier-related emission. The role played by N is elucidated by comparing quantum well samples having either zero, low (0.25%) or high (5%) N content. |
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Subject:
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DRNTU::Science::Physics::Optics and light. |
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Type:
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Journal Article |
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Series/ Journal Title:
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Applied Physics Letters. |
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School:
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School of Physical and Mathematical Sciences |
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Rights:
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Applied Physics Letters © copyright 2005 American Institute of Physics. The journal's website is located at http://apl.aip.org/. |
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Version:
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Published version |
