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Photoluminescence characterization of midinfrared InNxAs1-x/In0.53Ga0.47As/InP multiquantum wells with various N contents.

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Photoluminescence characterization of midinfrared InNxAs1-x/In0.53Ga0.47As/InP multiquantum wells with various N contents.

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Title: Photoluminescence characterization of midinfrared InNxAs1-x/In0.53Ga0.47As/InP multiquantum wells with various N contents.
Author: Sun, Handong.; Clark, Antony H.; Calvez, Stephane.; Dawson, M. D.; Shih, D. K.; Lin, H. H.
Copyright year: 2005
Abstract: We report the temperature-dependent photoluminescence characterization of InNxAs1-x/In0.53Ga0.47As/InP multiple quantum wells with various N contents emitting in the midinfrared wavelength range. The emission wavelength in this material system can be tuned by the N content, but the bowing effect is much weaker than in GaNAs. The correlation between the optical properties and the interface quality is demonstrated by examining the barrier-related emission. The role played by N is elucidated by comparing quantum well samples having either zero, low (0.25%) or high (5%) N content.
Subject: DRNTU::Science::Physics::Optics and light.
Type: Journal Article
Series/ Journal Title: Applied Physics Letters.
School: School of Physical and Mathematical Sciences
Rights: Applied Physics Letters © copyright 2005 American Institute of Physics. The journal's website is located at http://apl.aip.org/.
Version: Published version

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