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Photoluminescence characterization of midinfrared InNxAs1-x/In0.53Ga0.47As/InP multiquantum wells with various N contents

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Photoluminescence characterization of midinfrared InNxAs1-x/In0.53Ga0.47As/InP multiquantum wells with various N contents

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dc.contributor.author Sun, Handong
dc.contributor.author Clark, Antony H.
dc.contributor.author Calvez, Stephane
dc.contributor.author Dawson, M. D.
dc.contributor.author Shih, D. K.
dc.contributor.author Lin, H. H.
dc.date.accessioned 2009-08-12T03:34:40Z
dc.date.available 2009-08-12T03:34:40Z
dc.date.copyright 2005
dc.date.issued 2009-08-12T03:34:40Z
dc.identifier.citation Sun, H. D., Clark, A. H., Calvez, S., Dawson M. D., Shih, D. K., Lin, H. H. (2005). Photoluminescence characterization of midinfrared InNxAs1-x/In0.53Ga0.47As/InP multiquantum wells with various N contents. Applied Physics Letters, 87(8), 1-3.
dc.identifier.issn 0003-6951
dc.identifier.uri http://hdl.handle.net/10220/6059
dc.description.abstract We report the temperature-dependent photoluminescence characterization of InNxAs1-x/In0.53Ga0.47As/InP multiple quantum wells with various N contents emitting in the midinfrared wavelength range. The emission wavelength in this material system can be tuned by the N content, but the bowing effect is much weaker than in GaNAs. The correlation between the optical properties and the interface quality is demonstrated by examining the barrier-related emission. The role played by N is elucidated by comparing quantum well samples having either zero, low (0.25%) or high (5%) N content.
dc.format.extent 3 p.
dc.language.iso en
dc.relation.ispartofseries Applied Physics Letters.
dc.rights Applied Physics Letters © copyright 2005 American Institute of Physics. The journal's website is located at http://apl.aip.org/.
dc.subject DRNTU::Science::Physics::Optics and light.
dc.title Photoluminescence characterization of midinfrared InNxAs1-x/In0.53Ga0.47As/InP multiquantum wells with various N contents
dc.type Journal Article
dc.contributor.school School of Physical and Mathematical Sciences
dc.identifier.openurl http://sfxna09.hosted.exlibrisgroup.com:3410/ntu/sfxlcl3?sid=metalib:ELSEVIER_SCOPUS&id=doi:&genre=&isbn=&issn=&date=2005&volume=87&issue=8&spage=1&epage=3&aulast=Sun&aufirst=%20H%20D&auinit=&title=Applied%20Physics%20Letters&atitle=Photoluminescence%20characterization%20of%20midinfrared%20in%20Nx%20As1%2Dx%20%2F%20In0%2E53%20Ga0%2E47%20AsInP%20multiquantum%20wells%20with%20various%20N%20contents&sici.
dc.identifier.doi http://dx.doi.org/10.1063/1.2034119
dc.description.version Published version

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