| dc.contributor.author |
Sun, Handong. |
| dc.contributor.author |
Clark, Antony H. |
| dc.contributor.author |
Calvez, Stephane. |
| dc.contributor.author |
Dawson, M. D. |
| dc.contributor.author |
Shih, D. K. |
| dc.contributor.author |
Lin, H. H. |
| dc.date.accessioned |
2009-08-12T03:34:40Z |
| dc.date.available |
2009-08-12T03:34:40Z |
| dc.date.copyright |
2005 |
| dc.date.issued |
2009-08-12T03:34:40Z |
| dc.identifier.citation |
Sun, H. D., Clark, A. H., Calvez, S., Dawson M. D., Shih, D. K., Lin, H. H. (2005). Photoluminescence characterization of midinfrared InNxAs1-x/In0.53Ga0.47As/InP multiquantum wells with various N contents. Applied Physics Letters, 87(8), 1-3. |
| dc.identifier.issn |
0003-6951 |
| dc.identifier.uri |
http://hdl.handle.net/10220/6059 |
| dc.description.abstract |
We report the temperature-dependent photoluminescence characterization of InNxAs1-x/In0.53Ga0.47As/InP multiple quantum wells with various N contents emitting in the midinfrared wavelength range. The emission wavelength in this material system can be tuned by the N content, but the bowing effect is much weaker than in GaNAs. The correlation between the optical properties and the interface quality is demonstrated by examining the barrier-related emission. The role played by N is elucidated by comparing quantum well samples having either zero, low (0.25%) or high (5%) N content. |
| dc.format.extent |
3 p. |
| dc.language.iso |
en |
| dc.relation.ispartofseries |
Applied Physics Letters. |
| dc.rights |
Applied Physics Letters © copyright 2005 American Institute of Physics. The journal's website is located at http://apl.aip.org/. |
| dc.subject |
DRNTU::Science::Physics::Optics and light. |
| dc.title |
Photoluminescence characterization of midinfrared InNxAs1-x/In0.53Ga0.47As/InP multiquantum wells with various N contents. |
| dc.type |
Journal Article |
| dc.contributor.school |
School of Physical and Mathematical Sciences |
| dc.identifier.openurl |
http://sfxna09.hosted.exlibrisgroup.com:3410/ntu/sfxlcl3?sid=metalib:ELSEVIER_SCOPUS&id=doi:&genre=&isbn=&issn=&date=2005&volume=87&issue=8&spage=1&epage=3&aulast=Sun&aufirst=%20H%20D&auinit=&title=Applied%20Physics%20Letters&atitle=Photoluminescence%20characterization%20of%20midinfrared%20in%20Nx%20As1%2Dx%20%2F%20In0%2E53%20Ga0%2E47%20AsInP%20multiquantum%20wells%20with%20various%20N%20contents&sici. |
| dc.identifier.doi |
http://dx.doi.org/10.1063/1.2034119 |
| dc.description.version |
Published version |
