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Effects of rapid thermal annealing on the optical properties of low-loss 1.3 μm GalnNAs/GaAs saturable Bragg reflectors

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Effects of rapid thermal annealing on the optical properties of low-loss 1.3 μm GalnNAs/GaAs saturable Bragg reflectors

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dc.contributor.author Sun, Handong
dc.contributor.author Macaluso, Roberto
dc.contributor.author Calvez, Stephane
dc.contributor.author Valentine, G. J.
dc.contributor.author Burns, D.
dc.contributor.author Dawson, M. D.
dc.contributor.author Gundogdu, K.
dc.contributor.author Hall, K. C.
dc.contributor.author Boggess, T. F.
dc.contributor.author Jouhti, Tomi
dc.contributor.author Pessa, M.
dc.date.accessioned 2009-08-12T03:43:48Z
dc.date.available 2009-08-12T03:43:48Z
dc.date.copyright 2004
dc.date.issued 2009-08-12T03:43:48Z
dc.identifier.citation Sun, H. D., Macaluso, R., Calvez, S., Valentine, G. J., Burns, D., Dawson, M. D., et al. (2004). Effect of rapid thermal annealing on the optical properties of low-loss 1.3 mm GaInNAs/GaAs saturable Bragg reflectors. Journal of Applied Physics, 96(3), 1418-1424.
dc.identifier.issn 0021-8979
dc.identifier.uri http://hdl.handle.net/10220/6061
dc.description.abstract We report studies of the effect of rapid thermal annealing (RTA) on the optical properties of a low-loss 1.3 mum saturable Bragg reflector (SBR), consisting of a GaInNAs/GaAs single quantum well embedded in an AlAs/GaAs Bragg reflector grown monolithically on a GaAs substrate. RTA gives rise to a blueshift of the photoluminescence (PL) peak (and therefore of the excitonic absorption peak) and an enhancement of PL intensity, while the reflectivity properties including peak reflectivity and bandwidth are not degraded. Temperature dependent photoluminescence measurements show that the RTA-induced blueshift of photoluminescence consists of two components: one originating from the increase of optical transition energies and another from the reduction of carrier localization. Time-resolved photoluminescence results at room temperature provide information about the recombination dynamics of carriers directly relevant to the application of the SBR in laser mode locking.
dc.format.extent 7 p.
dc.language.iso en
dc.relation.ispartofseries Journal of applied physics
dc.rights Journal of Applied Physics © copyright 2004 American Institute of Physics. The journal's website is located at http://jap.aip.org/.
dc.subject DRNTU::Science::Physics::Optics and light.
dc.title Effects of rapid thermal annealing on the optical properties of low-loss 1.3 μm GalnNAs/GaAs saturable Bragg reflectors
dc.type Journal Article
dc.contributor.school School of Physical and Mathematical Sciences
dc.identifier.openurl http://sfxna09.hosted.exlibrisgroup.com:3410/ntu/sfxlcl3?sid=metalib:EBSCO_APH&id=doi:&genre=&isbn=&issn=00218979&date=2004&volume=96&issue=3&spage=1418&epage=1424&aulast=Sun&aufirst=%20H%20%20D&auinit=&title=Journal%20of%20Applied%20Physics&atitle=Effects%20of%20rapid%20thermal%20annealing%20on%20the%20optical%20properties%20of%20low%2Dloss%201%2E3%20%26mu%3Bm%20GaInNAs%2FGaAs%20saturable%20Bragg%20reflectors%2E&sici.
dc.identifier.doi http://dx.doi.org/10.1063/1.1767612
dc.description.version Published version

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