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Quantum well intermixing in GaInNAs/GaAs structures.

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Quantum well intermixing in GaInNAs/GaAs structures.

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Title: Quantum well intermixing in GaInNAs/GaAs structures.
Author: Sun, Handong.; Macaluso, Roberto.; Calvez, Stephane.; Dawson, M. D.; Robert, F.; Bryce, A. C.; Marsh, J. H.; Gilet, P.; Grenouillet, L.; Million, A.; Nam, K. B.; Lin, J. Y.; Jiang, H. X.
Copyright year: 2003
Abstract: We report on the characteristics of quantum well intermixing in GaInNAs/GaAs structures of differing N content. Rapid thermal annealing combined with SiO2 caps deposited on the surface of the samples is used to disorder 1.3 mum GaInNAs/GaAs multiquantum wells which have been preannealed in-situ to the stage of blueshift saturation. The different effects of two capping layer deposition techniques on the interdiffusion of In-Ga have been compared, particular regarding the role of sputtering processes. The dependence of quantum well intermixing-induced photoluminescence blueshift on N concentration has provided extra information on the intrinsic properties of the GaInNAs/GaAs material system. We found that the blueshift decreases as the N concentration increases. This finding not only rules out the possible mechanism of N-As interdiffusion, but also demonstrates the alloy stability of GaInNAs due to the strong bond between In-N.
Subject: DRNTU::Science::Physics::Optics and light.
Type: Journal Article
Series/ Journal Title: Journal of Applied Physics.
School: School of Physical and Mathematical Sciences
Rights: Journal of Applied Physics © copyright 2003 American Institute of Physics. The journal's website is located at http://jap.aip.org/.
Version: Published version

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