|
Title:
|
Quantum well intermixing in GaInNAs/GaAs structures.
|
|
Author:
|
Sun, Handong.; Macaluso, Roberto.; Calvez, Stephane.; Dawson, M. D.; Robert, F.; Bryce, A. C.; Marsh, J. H.; Gilet, P.; Grenouillet, L.; Million, A.; Nam, K. B.; Lin, J. Y.; Jiang, H. X.
|
|
Copyright year:
|
2003 |
|
Abstract:
|
We report on the characteristics of quantum well intermixing in GaInNAs/GaAs structures of differing N content. Rapid thermal annealing combined with SiO2 caps deposited on the surface of the samples is used to disorder 1.3 mum GaInNAs/GaAs multiquantum wells which have been preannealed in-situ to the stage of blueshift saturation. The different effects of two capping layer deposition techniques on the interdiffusion of In-Ga have been compared, particular regarding the role of sputtering processes. The dependence of quantum well intermixing-induced photoluminescence blueshift on N concentration has provided extra information on the intrinsic properties of the GaInNAs/GaAs material system. We found that the blueshift decreases as the N concentration increases. This finding not only rules out the possible mechanism of N-As interdiffusion, but also demonstrates the alloy stability of GaInNAs due to the strong bond between In-N. |
|
Subject:
|
DRNTU::Science::Physics::Optics and light. |
|
Type:
|
Journal Article |
|
Series/ Journal Title:
|
Journal of Applied Physics. |
|
School:
|
School of Physical and Mathematical Sciences |
|
Rights:
|
Journal of Applied Physics © copyright 2003 American Institute of Physics. The journal's website is located at http://jap.aip.org/. |
|
Version:
|
Published version |
