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Quantum well intermixing in GaInNAs/GaAs structures

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Quantum well intermixing in GaInNAs/GaAs structures

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dc.contributor.author Sun, Handong
dc.contributor.author Macaluso, Roberto
dc.contributor.author Calvez, Stephane
dc.contributor.author Dawson, M. D.
dc.contributor.author Robert, F.
dc.contributor.author Bryce, A. C.
dc.contributor.author Marsh, J. H.
dc.contributor.author Gilet, P.
dc.contributor.author Grenouillet, L.
dc.contributor.author Million, A.
dc.contributor.author Nam, K. B.
dc.contributor.author Lin, J. Y.
dc.contributor.author Jiang, H. X.
dc.date.accessioned 2009-08-12T03:48:08Z
dc.date.available 2009-08-12T03:48:08Z
dc.date.copyright 2003
dc.date.issued 2009-08-12T03:48:08Z
dc.identifier.citation Sun, H. D., Macaluso, R., Calvez, S., Dawson, M. D., Robert, F., Bryce, A. C., et al. (2003). Quantum well intermixing in GaInNAs/GaAs structures. Journal of Applied Physics, 94(12), 7581-7585.
dc.identifier.issn 0021-8979
dc.identifier.uri http://hdl.handle.net/10220/6062
dc.description.abstract We report on the characteristics of quantum well intermixing in GaInNAs/GaAs structures of differing N content. Rapid thermal annealing combined with SiO2 caps deposited on the surface of the samples is used to disorder 1.3 mum GaInNAs/GaAs multiquantum wells which have been preannealed in-situ to the stage of blueshift saturation. The different effects of two capping layer deposition techniques on the interdiffusion of In-Ga have been compared, particular regarding the role of sputtering processes. The dependence of quantum well intermixing-induced photoluminescence blueshift on N concentration has provided extra information on the intrinsic properties of the GaInNAs/GaAs material system. We found that the blueshift decreases as the N concentration increases. This finding not only rules out the possible mechanism of N-As interdiffusion, but also demonstrates the alloy stability of GaInNAs due to the strong bond between In-N.
dc.format.extent 5 p.
dc.language.iso en
dc.relation.ispartofseries Journal of Applied Physics.
dc.rights Journal of Applied Physics © copyright 2003 American Institute of Physics. The journal's website is located at http://jap.aip.org/.
dc.subject DRNTU::Science::Physics::Optics and light.
dc.title Quantum well intermixing in GaInNAs/GaAs structures
dc.type Journal Article
dc.contributor.school School of Physical and Mathematical Sciences
dc.identifier.openurl http://sfxna09.hosted.exlibrisgroup.com:3410/ntu/sfxlcl3?sid=metalib:EBSCO_APH&id=doi:&genre=&isbn=&issn=00218979&date=2003&volume=94&issue=12&spage=7581&epage=7585&aulast=Sun&aufirst=%20H%20%20D&auinit=&title=Journal%20of%20Applied%20Physics&atitle=Quantum%20well%20intermixing%20in%20GaInNAs%2FGaAs%20structures%2E&sici.
dc.identifier.doi http://dx.doi.org/10.1063/1.1627950
dc.description.version Published version

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