| dc.contributor.author |
Sun, Handong. |
| dc.contributor.author |
Macaluso, Roberto. |
| dc.contributor.author |
Calvez, Stephane. |
| dc.contributor.author |
Dawson, M. D. |
| dc.contributor.author |
Robert, F. |
| dc.contributor.author |
Bryce, A. C. |
| dc.contributor.author |
Marsh, J. H. |
| dc.contributor.author |
Gilet, P. |
| dc.contributor.author |
Grenouillet, L. |
| dc.contributor.author |
Million, A. |
| dc.contributor.author |
Nam, K. B. |
| dc.contributor.author |
Lin, J. Y. |
| dc.contributor.author |
Jiang, H. X. |
| dc.date.accessioned |
2009-08-12T03:48:08Z |
| dc.date.available |
2009-08-12T03:48:08Z |
| dc.date.copyright |
2003 |
| dc.date.issued |
2009-08-12T03:48:08Z |
| dc.identifier.citation |
Sun, H. D., Macaluso, R., Calvez, S., Dawson, M. D., Robert, F., Bryce, A. C., et al. (2003). Quantum well intermixing in GaInNAs/GaAs structures. Journal of Applied Physics, 94(12), 7581-7585. |
| dc.identifier.issn |
0021-8979 |
| dc.identifier.uri |
http://hdl.handle.net/10220/6062 |
| dc.description.abstract |
We report on the characteristics of quantum well intermixing in GaInNAs/GaAs structures of differing N content. Rapid thermal annealing combined with SiO2 caps deposited on the surface of the samples is used to disorder 1.3 mum GaInNAs/GaAs multiquantum wells which have been preannealed in-situ to the stage of blueshift saturation. The different effects of two capping layer deposition techniques on the interdiffusion of In-Ga have been compared, particular regarding the role of sputtering processes. The dependence of quantum well intermixing-induced photoluminescence blueshift on N concentration has provided extra information on the intrinsic properties of the GaInNAs/GaAs material system. We found that the blueshift decreases as the N concentration increases. This finding not only rules out the possible mechanism of N-As interdiffusion, but also demonstrates the alloy stability of GaInNAs due to the strong bond between In-N. |
| dc.format.extent |
5 p. |
| dc.language.iso |
en |
| dc.relation.ispartofseries |
Journal of Applied Physics. |
| dc.rights |
Journal of Applied Physics © copyright 2003 American Institute of Physics. The journal's website is located at http://jap.aip.org/. |
| dc.subject |
DRNTU::Science::Physics::Optics and light. |
| dc.title |
Quantum well intermixing in GaInNAs/GaAs structures. |
| dc.type |
Journal Article |
| dc.contributor.school |
School of Physical and Mathematical Sciences |
| dc.identifier.openurl |
http://sfxna09.hosted.exlibrisgroup.com:3410/ntu/sfxlcl3?sid=metalib:EBSCO_APH&id=doi:&genre=&isbn=&issn=00218979&date=2003&volume=94&issue=12&spage=7581&epage=7585&aulast=Sun&aufirst=%20H%20%20D&auinit=&title=Journal%20of%20Applied%20Physics&atitle=Quantum%20well%20intermixing%20in%20GaInNAs%2FGaAs%20structures%2E&sici. |
| dc.identifier.doi |
http://dx.doi.org/10.1063/1.1627950 |
| dc.description.version |
Published version |
