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Characterization of selective quantum well intermixing in 1.3 mu m GaInNAs/GaAs structures

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Characterization of selective quantum well intermixing in 1.3 mu m GaInNAs/GaAs structures

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dc.contributor.author Sun, Handong
dc.contributor.author Macaluso, Roberto
dc.contributor.author Dawson, M. D.
dc.contributor.author Robert, F.
dc.contributor.author Bryce, A. C.
dc.contributor.author Marsh, J. H.
dc.contributor.author Riechert, H.
dc.date.accessioned 2009-08-12T03:52:32Z
dc.date.available 2009-08-12T03:52:32Z
dc.date.copyright 2003
dc.date.issued 2009-08-12T03:52:32Z
dc.identifier.citation Sun, H.D., Macaluso, R., Dawson, M. D., Robert, F., Bryce, A. C., Marsh, J. H., et al. (2003). Characterization of selective quantum well intermixing in 1.3 mu m GaInNAs/GaAs structures. Journal of Applied Physics, 94(3), 1550-1556.
dc.identifier.issn 0021-8979
dc.identifier.uri http://hdl.handle.net/10220/6063
dc.description.abstract Rapid thermal annealing combined with SiO2 caps deposited on the surface of samples by different techniques is used to selectively disorder 1.3 mum GaInNAs/GaAs multiquantum wells which have been preannealed in situ to the stage of blueshift saturation. After thermal annealing under specific conditions, a shift in band gap of over 170 meV has been obtained in sputtered SiO2-capped samples, while uncapped and plasma enhanced chemical vapor deposited SiO2-capped samples demonstrated a negligible shift. Quantum well intermixing in sputtered SiO2-capped samples originates from enhanced compositional interdiffusion due to the generation of point defects by ion bombardment during the sputtering process. Secondary ion mass spectrometry has confirmed that the enhanced blueshift was caused by the interdiffusion of group III atoms (In and Ga) between the quantum wells and barriers. Detailed photoluminescence and excitation spectroscopy were performed to study the optical properties of both intermixed and nonintermixed samples.
dc.format.extent 7 p.
dc.language.iso en
dc.relation.ispartofseries Journal of applied physics
dc.rights Journal of Applied Physics © copyright 2003 American Institute of Physics. The journal's website is located at http://jap.aip.org/.
dc.subject DRNTU::Science::Physics::Optics and light.
dc.title Characterization of selective quantum well intermixing in 1.3 mu m GaInNAs/GaAs structures
dc.type Journal Article
dc.contributor.school School of Physical and Mathematical Sciences
dc.identifier.openurl http://sfxna09.hosted.exlibrisgroup.com:3410/ntu/sfxlcl3?sid=metalib:EBSCO_APH&id=doi:&genre=&isbn=&issn=00218979&date=2003&volume=94&issue=3&spage=1550&epage=&aulast=Sun&aufirst=%20H%20%20D&auinit=&title=Journal%20of%20Applied%20Physics&atitle=Characterization%20of%20selective%20quantum%20well%20intermixing%20in%201%2E3%20%26mu%3Bm%20GaInNAs%2FGaAs%20structures%2E&sici.
dc.identifier.doi http://dx.doi.org/10.1063/1.1590413
dc.description.version Published version

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