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Temperature dependence of near ultraviolet photoluminescence in ZnO/(Mg, Zn)O multiple quantum wells

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Temperature dependence of near ultraviolet photoluminescence in ZnO/(Mg, Zn)O multiple quantum wells

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Title: Temperature dependence of near ultraviolet photoluminescence in ZnO/(Mg, Zn)O multiple quantum wells
Author: Makino, T.; Tuan, N. T.; Sun, Handong; Chia, C. H.; Segawa, Y.; Kawasaki, M.; Ohtomo, A.; Tamura, K.; Koinuma, H.
Copyright year: 2001
Abstract: We report on temperature dependence of excitonic photoluminescence (PL) from ZnO/(Mg, Zn)O multiple quantum wells (MQWs). Two kinds of MQWs having different barrier heights grown by laser molecular-beam epitaxy showed significantly different temperature dependences of PL spectra; in ZnO/Mg0.27Zn0.73O MQWs, the PL peak energy at 50–200 K was a monotonically increasing function of temperature, which was opposite to that ascribed by band gap shrinkage. Moreover, spectra taken at 95–200 K encompassed two peaks, both of which originated from recombination of localized excitons. The temperature-induced shift (redshift-blueshift-peak duplication-redshift) At 5–300 K is caused by a change in the exciton dynamics with increasing temperature due to inhomogeneity and the exciton localization effect. On the other hand, the corresponding dependence in ZnO/Mg0.12Zn0.88O MQWs (lower barrier height) was similar to that in bulk II–VI semiconductors.
Subject: DRNTU::Science::Physics::Optics and light.
Type: Journal Article
Series/ Journal Title: Applied Physics Letters.
School: School of Physical and Mathematical Sciences
Rights: Applied Physics Letters © copyright 2001 American Institute of Physics. The journal's website is located at http://apl.aip.org/.
Version: Published version

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