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Temperature dependence of near ultraviolet photoluminescence in ZnO/(Mg, Zn)O multiple quantum wells

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Temperature dependence of near ultraviolet photoluminescence in ZnO/(Mg, Zn)O multiple quantum wells

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dc.contributor.author Makino, T.
dc.contributor.author Tuan, N. T.
dc.contributor.author Sun, Handong
dc.contributor.author Chia, C. H.
dc.contributor.author Segawa, Y.
dc.contributor.author Kawasaki, M.
dc.contributor.author Ohtomo, A.
dc.contributor.author Tamura, K.
dc.contributor.author Koinuma, H.
dc.date.accessioned 2009-11-02T07:25:05Z
dc.date.available 2009-11-02T07:25:05Z
dc.date.copyright 2001
dc.date.issued 2009-11-02T07:25:05Z
dc.identifier.citation Makino, T., Tuan, N. T., Sun, H. D., Chia, C. H., Segawa, Y., Kawasaki, M., et al. (2001). Temperature dependence of near ultraviolet photoluminescence in ZnO/(Mg, Zn)O multiple quantum wells. Applied Physics Letters., 78, 1979.
dc.identifier.issn 0003-6951
dc.identifier.uri http://hdl.handle.net/%dspace.prefix%/6135
dc.description.abstract We report on temperature dependence of excitonic photoluminescence (PL) from ZnO/(Mg, Zn)O multiple quantum wells (MQWs). Two kinds of MQWs having different barrier heights grown by laser molecular-beam epitaxy showed significantly different temperature dependences of PL spectra; in ZnO/Mg0.27Zn0.73O MQWs, the PL peak energy at 50–200 K was a monotonically increasing function of temperature, which was opposite to that ascribed by band gap shrinkage. Moreover, spectra taken at 95–200 K encompassed two peaks, both of which originated from recombination of localized excitons. The temperature-induced shift (redshift-blueshift-peak duplication-redshift) At 5–300 K is caused by a change in the exciton dynamics with increasing temperature due to inhomogeneity and the exciton localization effect. On the other hand, the corresponding dependence in ZnO/Mg0.12Zn0.88O MQWs (lower barrier height) was similar to that in bulk II–VI semiconductors.
dc.format.extent 3 p.
dc.language.iso en
dc.relation.ispartofseries Applied Physics Letters.
dc.rights Applied Physics Letters © copyright 2001 American Institute of Physics. The journal's website is located at http://apl.aip.org/.
dc.subject DRNTU::Science::Physics::Optics and light.
dc.title Temperature dependence of near ultraviolet photoluminescence in ZnO/(Mg, Zn)O multiple quantum wells
dc.type Journal Article
dc.contributor.school School of Physical and Mathematical Sciences
dc.identifier.openurl http://scitation.aip.org.ezlibproxy1.ntu.edu.sg/getabs/servlet/GetabsServlet?prog=normal&id=APPLAB000078000014001979000001
dc.identifier.doi http://dx.doi.org/10.1063/1.1357451
dc.description.version Published version

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