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Optical transitions in GaInNAs/GaAs multiquantum wells with varying N contents investigated by photoluminescence excitation spectroscopy

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Optical transitions in GaInNAs/GaAs multiquantum wells with varying N contents investigated by photoluminescence excitation spectroscopy

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dc.contributor.author Sun, Handong
dc.contributor.author Dawson, M. D.
dc.contributor.author Othman, M.
dc.contributor.author Yong, J. C. L.
dc.contributor.author Rorison, J. M.
dc.contributor.author Gilet, P.
dc.contributor.author Grenouillet, L.
dc.contributor.author Million, A.
dc.date.accessioned 2009-11-13T04:42:17Z
dc.date.available 2009-11-13T04:42:17Z
dc.date.copyright 2003
dc.date.issued 2009-11-13T04:42:17Z
dc.identifier.citation Sun, H. D., Dawson, M. D., Othman, M., Yong, J. C. L., & Rorison, J. M., et al.(2003). Optical transitions in GaInNAs/GaAs multiquantum wells with various N contents investigated by photoluminescence excitation spectroscopy. Applied Physics Letters., 82(3), 376-378.
dc.identifier.issn 0003-6951
dc.identifier.uri http://hdl.handle.net/10220/6152
dc.description.abstract We report on the nitrogen-concentration dependence of optical transitions between quantized states of electrons and holes in GaInNAs/GaAs multi-quantum wells. Using low-temperature photoluminescence excitation spectroscopy, systematic studies have been performed on a series of samples with nitrogen concentrations in the range 0%–1.14%. The observed data were compared with theoretical fitting based on the band anticrossing model in which the localized N states interact with the extended states in the conduction band, taking strain effects into account. Our results are consistent with the band anticrossing model, but with differing coupling strength between different quantum states of electrons in the quantum wells.
dc.format.extent 4 p.
dc.language.iso en
dc.relation.ispartofseries Applied Physics Letters.
dc.rights Applied Physics Letters © copywrite 2003 American Institute of Physics. The journal's website is located at http://apl.aip.org/.
dc.subject DRNTU::Science::Physics.
dc.title Optical transitions in GaInNAs/GaAs multiquantum wells with varying N contents investigated by photoluminescence excitation spectroscopy
dc.type Journal Article
dc.contributor.school School of Physical and Mathematical Sciences
dc.identifier.doi http://dx.doi.org/10.1063/1.1539921
dc.description.version Published version

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