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High frequency drain current noise modeling in MOSFETs under sub-threshold condition

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High frequency drain current noise modeling in MOSFETs under sub-threshold condition

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dc.contributor.author Chan, Lye Hock
dc.contributor.author Yeo, Kiat Seng
dc.contributor.author Chew, Kok Wai Johnny
dc.contributor.author Ong, Shih Ni
dc.contributor.author Loo, Xi Sung
dc.contributor.author Boon, Chirn Chye
dc.contributor.author Do, Manh Anh
dc.date.accessioned 2010-05-11T01:02:02Z
dc.date.available 2010-05-11T01:02:02Z
dc.date.copyright 2009
dc.date.issued 2010-05-11T01:02:02Z
dc.identifier.citation Chan, L. H., Yeo, K. S., Chew, K. W. J., Ong, S. N., Loo, X. S., Boon, C. C., & Do, M. A.(2009). Integrated Circuits, ISIC '09. In Proceedings of the 2009 12th International Symposium (pp.310-313)
dc.identifier.uri http://hdl.handle.net/10220/6282
dc.description.abstract A new high frequency drain current noise model was developed for MOSFETs under sub-threshold condition. A simple parameter extraction technique is proposed, which utilizes Y-parameter analysis on the RF small-signal equivalent circuit. Good agreement has been obtained between the predicted and measured results up to 20 GHz.
dc.format.extent 4 p.
dc.language.iso en
dc.rights © 2009 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder. http://www.ieee.org/portal/site This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder.
dc.subject DRNTU::Engineering::Electrical and electronic engineering.
dc.title High frequency drain current noise modeling in MOSFETs under sub-threshold condition
dc.type Conference Paper
dc.contributor.conference IEEE International Symposium on Integrated Circuits (12th : 2009 : Singapore)
dc.contributor.school School of Electrical and Electronic Engineering
dc.identifier.openurl http://ieeexplore.ieee.org.ezlibproxy1.ntu.edu.sg/search/srchabstract.jsp?tp=&arnumber=5403709&queryText%3DHigh+Frequency+Drain+Current+Noise+Modeling+in+MOSFETs+under+Sub-Threshold+Condition%26openedRefinements%3D*%26searchField%3DSearch+All
dc.identifier.openurl http://www.isic2009.org/
dc.description.version Published version

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