| dc.contributor.author |
Chan, Lye Hock. |
| dc.contributor.author |
Yeo, Kiat Seng. |
| dc.contributor.author |
Chew, Kok Wai. |
| dc.contributor.author |
Ong, Shih Ni. |
| dc.contributor.author |
Loo, Xi Sung. |
| dc.contributor.author |
Boon, Chirn Chye. |
| dc.contributor.author |
Do, Manh Anh. |
| dc.date.accessioned |
2010-05-11T01:02:02Z |
| dc.date.available |
2010-05-11T01:02:02Z |
| dc.date.copyright |
2009 |
| dc.date.issued |
2010-05-11T01:02:02Z |
| dc.identifier.citation |
Chan, L. H., Yeo, K. S., Chew, K. W., Ong, S. N., Loo, X. S., Boon, C. C., & Do, M. A.(2009). Integrated Circuits, ISIC '09. In Proceedings of the 2009 12th International Symposium (pp.310-313) |
| dc.identifier.uri |
http://hdl.handle.net/10220/6282 |
| dc.description.abstract |
A new high frequency drain current noise model was developed for MOSFETs under sub-threshold condition. A simple parameter extraction technique is proposed, which utilizes Y-parameter analysis on the RF small-signal equivalent circuit. Good agreement has been obtained between the predicted and measured results up to 20 GHz. |
| dc.format.extent |
4 p. |
| dc.language.iso |
en |
| dc.rights |
© 2009 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder. http://www.ieee.org/portal/site This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder. |
| dc.subject |
DRNTU::Engineering::Electrical and electronic engineering. |
| dc.title |
High frequency drain current noise modeling in MOSFETs under sub-threshold condition. |
| dc.type |
Conference Paper |
| dc.contributor.conference |
IEEE International Symposium on Integrated Circuits (12th:2009:Singapore) |
| dc.contributor.school |
School of Electrical and Electronic Engineering |
| dc.identifier.openurl |
http://ieeexplore.ieee.org.ezlibproxy1.ntu.edu.sg/search/srchabstract.jsp?tp=&arnumber=5403709&queryText%3DHigh+Frequency+Drain+Current+Noise+Modeling+in+MOSFETs+under+Sub-Threshold+Condition%26openedRefinements%3D*%26searchField%3DSearch+All |
| dc.identifier.openurl |
http://www.isic2009.org/ |
| dc.description.version |
Published version |
