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Utilizing reverse short-channel effect for optimal subthreshold circuit design.

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Utilizing reverse short-channel effect for optimal subthreshold circuit design.

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dc.contributor.author Kim, Tony Tae-Hyoung.
dc.contributor.author Keane, John.
dc.contributor.author Eom, Hanyong.
dc.contributor.author Kim, Chris H.
dc.date.accessioned 2010-08-23T02:50:36Z
dc.date.available 2010-08-23T02:50:36Z
dc.date.copyright 2007
dc.date.issued 2010-08-23T02:50:36Z
dc.identifier.citation Kim, T. H., Keane, J., Eom, H., & Kim, C. H. (2007). Utilizing reverse short-channel effect for optimal subthreshold circuit design. IEEE Transactions on Very Large Scale Integration (VLSI) Systems, 15(7), 821-828.
dc.identifier.issn 1063-8210
dc.identifier.uri http://hdl.handle.net/10220/6341
dc.description.abstract The impact of the reverse short-channel effect (RSCE) on device current is stronger in the subthreshold region due to reduced drain-induced barrier lowering (DIBL) and the exponential dependency of current on threshold voltage. This paper describes a device-size optimization method for subthreshold circuits utilizing RSCE to achieve high drive current, low device capacitance, less sensitivity to random dopant fluctuations, better subthreshold swing, and improved energy dissipation. Simulation results using ISCAS benchmark circuits show that the critical path delay, power consumption, and energy consumption can be improved by up to 10.4%, 34.4%, and 41.2%, respectively.
dc.format.extent 9 p.
dc.language.iso en
dc.relation.ispartofseries IEEE transactions on very large scale integration (VLSI) systems
dc.rights © 2007 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder. http://www.ieee.org/portal/site This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder.
dc.subject DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits.
dc.title Utilizing reverse short-channel effect for optimal subthreshold circuit design.
dc.type Journal Article
dc.contributor.school School of Electrical and Electronic Engineering
dc.identifier.doi http://dx.doi.org/10.1109/TVLSI.2007.899239
dc.description.version Published version

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