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A new unified model for channel thermal noise of deep sub-micron RFCMOS

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A new unified model for channel thermal noise of deep sub-micron RFCMOS

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dc.contributor.author Ong, Shih Ni
dc.contributor.author Yeo, Kiat Seng
dc.contributor.author Chan, Lye Hock
dc.contributor.author Loo, Xi Sung
dc.contributor.author Boon, Chirn Chye
dc.contributor.author Do, Manh Anh
dc.contributor.author Chew, Kok Wai Johnny
dc.date.accessioned 2010-08-24T08:36:10Z
dc.date.available 2010-08-24T08:36:10Z
dc.date.copyright 2009
dc.date.issued 2010-08-24T08:36:10Z
dc.identifier.citation Ong, S. N., Yeo, K. S., Chan, L. H., Loo, X. S., Boon, C. C., Do, M. A., et al. (2009). A new unified model for channel thermal noise of deep sub-micron RFCMOS. IEEE International Symposium on Radio-Frequency Integration Technology, Singapore, 280-283.
dc.identifier.uri http://hdl.handle.net/10220/6349
dc.description.abstract A new unified model for circuit simulation is presented to predict the high frequency channel thermal noise of deep sub-micron MOSFETs in strong inversion region. Based on the new channel thermal noise model, the simulated channel thermal noise spectral densities of the devices fabricated in a 0.13μm RFCMOS technology process are compared to the channel noise directly extracted from RF noise measurements.
dc.format.extent 4 p.
dc.language.iso en
dc.rights © 2009 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder. http://www.ieee.org/portal/site This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder.
dc.subject DRNTU::Engineering::Electrical and electronic engineering::Integrated circuits.
dc.title A new unified model for channel thermal noise of deep sub-micron RFCMOS
dc.type Conference Paper
dc.contributor.conference IEEE International Symposium on Radio-Frequency Integration Technology (2009 : Singapore)
dc.contributor.school School of Electrical and Electronic Engineering
dc.identifier.doi http://dx.doi.org/10.1109/RFIT.2009.5383701
dc.description.version Published version
dc.contributor.organization Chartered Semiconductor Manufacturing Ltd

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