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Charging effect of Al2O3 thin films containing Al nanocrystals.

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Charging effect of Al2O3 thin films containing Al nanocrystals.

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Title: Charging effect of Al2O3 thin films containing Al nanocrystals.
Author: Liu, Yang.; Chen, Tupei.; Zhu, Wei.; Yang, Ming.; Cen, Zhan Hong.; Wong, Jen It.; Li, Yibin.; Zhang, Sam.; Chen, X. B.; Fung, Stevenson Hon Yuen.
Copyright year: 2008
Abstract: In this work, Al2O3 thin film containing Al nanocrystals (nc-Al) is deposited on Si substrate by radio frequency sputtering to form a metal-insulator-semiconductor structure. Both electron and hole trapping in nc-Al are observed. The charge storage ability of the nc-Al/Al2O3 thin films provides the possibility of memory applications. Charging in the nc-Al also leads to a change in the dc resistance of the thin films, namely, the electron trapping in the nc-Al leads to an increase in the resistance, whereas the resistance is reduced if there is hole trapping in the nc-Al.
Subject: DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics.
Type: Journal Article
Series/ Journal Title: Applied physics letters
School: School of Electrical and Electronic Engineering
Rights: Applied Physics Letters © copyright 2008 American Institute of Physics. The journal's website is located at http://apl.aip.org/applab/v93/i14/p142106_s1?isAuthorized=no
Version: Published version

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