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Title:
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Charging effect of Al2O3 thin films containing Al nanocrystals.
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Author:
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Liu, Yang.; Chen, Tupei.; Zhu, W.; Yang, Ming.; Cen, Zhan Hong.; Wong, Jen It.; Li, Yibin.; Zhang, Sam.; Chen, X. B.; Fung, Stevenson Hon Yuen.
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Copyright year:
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2008 |
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Abstract:
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In this work, Al2O3 thin film containing Al nanocrystals (nc-Al) is deposited on Si substrate by radio frequency sputtering to form a metal-insulator-semiconductor structure. Both electron and hole trapping in nc-Al are observed. The charge storage ability of the nc-Al/Al2O3 thin films provides the possibility of memory applications. Charging in the nc-Al also leads to a change in the dc resistance of the thin films, namely, the electron trapping in the nc-Al leads to an increase in the resistance, whereas the resistance is reduced if there is hole trapping in the nc-Al. |
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Subject:
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DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics. |
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Type:
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Journal Article |
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Series/ Journal Title:
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Applied physics letters |
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School:
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School of Electrical and Electronic Engineering |
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Rights:
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Applied Physics Letters © copyright 2008 American Institute of Physics. The journal's website is located at http://apl.aip.org/applab/v93/i14/p142106_s1?isAuthorized=no |
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Version:
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Published version |
