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Charging effect of Al2O3 thin films containing Al nanocrystals

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Charging effect of Al2O3 thin films containing Al nanocrystals

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dc.contributor.author Liu, Yang
dc.contributor.author Chen, Tupei
dc.contributor.author Zhu, Wei
dc.contributor.author Yang, Ming
dc.contributor.author Cen, Zhan Hong
dc.contributor.author Wong, Jen It
dc.contributor.author Li, Yibin
dc.contributor.author Zhang, Sam
dc.contributor.author Chen, X. B.
dc.contributor.author Fung, Stevenson Hon Yuen
dc.date.accessioned 2010-08-25T01:31:07Z
dc.date.available 2010-08-25T01:31:07Z
dc.date.copyright 2008
dc.date.issued 2010-08-25T01:31:07Z
dc.identifier.citation Liu, Y., Chen, T., Zhu, W., Yang, M., Cen, Z. H., Wong, J. I., et al. (2008). Charging effect of Al2O3 thin films containing Al nanocrystals. Applied Physics Letters, 93, 1-3.
dc.identifier.issn 0003-6951
dc.identifier.uri http://hdl.handle.net/10220/6351
dc.description.abstract In this work, Al2O3 thin film containing Al nanocrystals (nc-Al) is deposited on Si substrate by radio frequency sputtering to form a metal-insulator-semiconductor structure. Both electron and hole trapping in nc-Al are observed. The charge storage ability of the nc-Al/Al2O3 thin films provides the possibility of memory applications. Charging in the nc-Al also leads to a change in the dc resistance of the thin films, namely, the electron trapping in the nc-Al leads to an increase in the resistance, whereas the resistance is reduced if there is hole trapping in the nc-Al.
dc.format.extent 4 p.
dc.language.iso en
dc.relation.ispartofseries Applied physics letters
dc.rights Applied Physics Letters © copyright 2008 American Institute of Physics. The journal's website is located at http://apl.aip.org/applab/v93/i14/p142106_s1?isAuthorized=no
dc.subject DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics
dc.title Charging effect of Al2O3 thin films containing Al nanocrystals
dc.type Journal Article
dc.contributor.school School of Electrical and Electronic Engineering
dc.identifier.doi http://dx.doi.org/10.1063/1.2994695
dc.description.version Published version

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