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Charge trapping and retention behaviors of Ge nanocrystals distributed in the gate oxide near the gate synthesized by low-energy ion implantation

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Charge trapping and retention behaviors of Ge nanocrystals distributed in the gate oxide near the gate synthesized by low-energy ion implantation

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dc.contributor.author Yang, Ming
dc.contributor.author Chen, Tupei
dc.contributor.author Wong, Jen It
dc.contributor.author Ng, Chi Yung
dc.contributor.author Liu, Yang
dc.contributor.author Ding, Liang
dc.contributor.author Fung, Stevenson Hon Yuen
dc.contributor.author Trigg, Alastair David
dc.contributor.author Tung, Chih Hang
dc.contributor.author Li, Chang Ming
dc.date.accessioned 2010-08-25T03:11:21Z
dc.date.available 2010-08-25T03:11:21Z
dc.date.copyright 2007
dc.date.issued 2010-08-25T03:11:21Z
dc.identifier.citation Yang, M., Chen, T., Wong, J. I., Ng, C. Y., Liu, Y., Ding, L., et al. (2007). Charge trapping and retention behaviors of Ge nanocrystals distributed in the gate oxide near the gate synthesized by low-energy ion implantation. Journal of Applied Physics, 101, 1-5.
dc.identifier.issn 0021-8979
dc.identifier.uri http://hdl.handle.net/10220/6352
dc.description.abstract A layer of Ge nanocrystals (nc-Ge) distributed in the gate oxide near the gate of a metal-oxide-semiconductor structure is synthesized with low-energy Ge ion implantation followed by thermal annealing at 800  degrees celsius. The behaviors of charge trapping and charge retention in the nc-Ge have been studied. For a positive charging voltage, only electron trapping occurs, and the trapped electrons show a long retention time. However, for a negative charging voltage, both the hole trapping and electron trapping occur simultaneously, and the hole trapping is dominant if the magnitude of the charging voltage is small or the charging time is short. Due to the relatively easier loss of the trapped holes, the net charge trapping in the nc-Ge exhibits a continuous shift toward a more negative value with the waiting time.
dc.format.extent 5 p.
dc.language.iso en
dc.relation.ispartofseries Journal of applied physics
dc.rights Journal of Applied Physics © copyright 2007 American Institute of Physics. The journal's website is located at http://jap.aip.org/japiau/v101/i12/p124313_s1?isAuthorized=no
dc.subject DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics.
dc.subject DRNTU::Engineering::Chemical engineering::Biochemical engineering.
dc.title Charge trapping and retention behaviors of Ge nanocrystals distributed in the gate oxide near the gate synthesized by low-energy ion implantation
dc.type Journal Article
dc.contributor.school School of Electrical and Electronic Engineering
dc.identifier.doi http://dx.doi.org/10.1063/1.2749470
dc.description.version Published version
dc.contributor.organization Institute of Microelectronics

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