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Title:
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Analytical high frequency channel thermal noise modeling in deep sub-micron MOSFETs.
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Author:
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Ong, Shih Ni.; Yeo, Kiat Seng.; Chew, Kok Wai.; Chan, Lye Hock.; Loo, Xi Sung.; Do, Manh Anh.; Boon, Chirn Chye.
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Copyright year:
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2009 |
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Abstract:
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A simple high frequency channel thermal noise
model was developed for MOSFETs in strong inversion region.
Short channel effects such as channel length modulation effect
and mobility degradation due to vertical field were taken into
account in the current-voltage model and channel thermal noise
model. It was found that the long channel Tsividis’ noise model is
still valid for short channel devices by including the proposed
effective mobility model and the channel length modulation
effect. Good agreement has been obtained between the simulated
and measured results across different frequencies, gate biases
and drain biases. |
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Subject:
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DRNTU::Engineering::Electrical and electronic engineering::Semiconductors. |
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Type:
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Conference Paper |
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Conference name:
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IEEE International Symposium on Integrated Circuits (12th:2009:Singapore) |
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School:
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School of Electrical and Electronic Engineering |
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Research Centre:
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Centre for Integrated Circuits and Systems |
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Related Organization:
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Chartered Semiconductor Manufacturing Ltd |
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Rights:
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© 2009 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder. http://www.ieee.org/portal/site This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder. |
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Version:
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Published version |
