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Influence of silicon-nanocrystal distribution in SiO2 matrix on charge injection and charge decay

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Influence of silicon-nanocrystal distribution in SiO2 matrix on charge injection and charge decay

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dc.contributor.author Tseng, Ampere A.
dc.contributor.author Ng, Chi Yung
dc.contributor.author Chen, Tupei
dc.contributor.author Tse, Man Siu
dc.contributor.author Fung, Stevenson Hon Yuen
dc.contributor.author Lim, Vanissa Sei Wei
dc.date.accessioned 2010-08-27T06:37:05Z
dc.date.available 2010-08-27T06:37:05Z
dc.date.copyright 2005
dc.date.issued 2010-08-27T06:37:05Z
dc.identifier.citation Tseng, A. A., Ng, C. Y., Chen, T. P., Tse, M. S., Fung, S. H. Y., & Lim, V. S. W. (2005). Influence of silicon-nanocrystal distribution in SiO2 matrix on charge injection and charge decay. Applied Physics Letters, 86, 1-3.
dc.identifier.issn 0003-6951
dc.identifier.uri http://hdl.handle.net/10220/6355
dc.description.abstract Influence of distribution of silicon nanocrystals (nc-Si) embedded in SiO2 matrix on charge injection and charge decay of the nc-Si has been investigated with electrostatic force microscopy. For nc-Si distributing in the surface region, the size of charge cloud does not change with decay time, and neighboring charges have no influence on the charge decay. In contrast, for nc-Si distributing away from the surface, the size linearly increases with decay time, and the neighboring charges can either accelerate or resist the charge decay depending on their charge signs. In addition, the characteristic decay time for the first distribution is much shorter than that for the second distribution. These results provide an insight into the dissipation mechanism of the charges stored in the nc-Si.
dc.format.extent 3 p.
dc.language.iso en
dc.relation.ispartofseries Applied physics letters
dc.rights Applied Physics Letters © 2005 American Institute of Physics. The journal's website is located at http://apl.aip.org/applab/v86/i15/p152110_s1?isAuthorized=no
dc.subject DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics
dc.title Influence of silicon-nanocrystal distribution in SiO2 matrix on charge injection and charge decay
dc.type Journal Article
dc.contributor.school School of Electrical and Electronic Engineering
dc.identifier.doi http://dx.doi.org/10.1063/1.1901831
dc.description.version Published version
dc.contributor.organization Institute of Microelectronics

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