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Memory effect of Al-rich AlN films synthesized with rf magnetron sputtering

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Memory effect of Al-rich AlN films synthesized with rf magnetron sputtering

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dc.contributor.author Zhao, P.
dc.contributor.author Liu, Yang
dc.contributor.author Chen, Tupei
dc.contributor.author Zhang, Sam
dc.contributor.author Fu, Yong Qing
dc.contributor.author Fung, Stevenson Hon Yuen
dc.date.accessioned 2010-08-30T01:12:02Z
dc.date.available 2010-08-30T01:12:02Z
dc.date.copyright 2005
dc.date.issued 2010-08-30T01:12:02Z
dc.identifier.citation Zhao, P., Liu, Y., Chen, T. P., Zhang, S., Fu, Y. Q., & Fung, S. H. Y. (2005). Memory effect of Al-rich AlN films synthesized with rf magnetron sputtering. Applied Physics Letters 87, 1-3.
dc.identifier.issn 0003-6951
dc.identifier.uri http://hdl.handle.net/10220/6357
dc.description.abstract Al-rich AlN thin film, which is deposited onto n-type Si substrate by radio frequency sputtering of Al target in an argon and Nitrogen gas mixture, can exhibit a large memory effect as a result of charge trapping in the Al nanoparticles/nanoclusters embedded in the AlN matrix. For the metal-insulator-semiconductor structure with a 60 nm Al-rich AlN thin film, a voltage of −15 V applied to the metal electrode for 10^−6 s causes a flatband voltage shift of ∼ 1.5 V. Both electron trapping and hole trapping are possible, depending on the polarity of the applied voltage. In addition, whether the electron trapping or the hole trapping is the dominant process also depends on the charging time and the magnitude of the voltage. The Al-rich AlN thin films provide the possibility of memory applications with low cost.
dc.format.extent 3 p.
dc.language.iso en
dc.relation.ispartofseries Applied physics letters
dc.rights Applied Physics Letters © copyright 2005 American Institute of Physics. The journal's website is located at http://apl.aip.org/applab/v87/i3/p033112_s1?isAuthorized=no
dc.subject DRNTU::Engineering::Electrical and electronic engineering::Semiconductors.
dc.title Memory effect of Al-rich AlN films synthesized with rf magnetron sputtering
dc.type Journal Article
dc.contributor.school School of Electrical and Electronic Engineering
dc.identifier.doi http://dx.doi.org/10.1063/1.2000337
dc.description.version Published version

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