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Optical properties of silicon nanocrystals embedded in a SiO2 matrix

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Optical properties of silicon nanocrystals embedded in a SiO2 matrix

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dc.contributor.author Ding, Liang
dc.contributor.author Chen, Tupei
dc.contributor.author Liu, Yang
dc.contributor.author Ng, Chi Yung
dc.contributor.author Fung, Stevenson Hon Yuen
dc.date.accessioned 2010-08-30T01:56:36Z
dc.date.available 2010-08-30T01:56:36Z
dc.date.copyright 2005
dc.date.issued 2010-08-30T01:56:36Z
dc.identifier.citation Ding, L., Chen, T. P., Liu, Y., Ng, C. Y., & Fung, S. H. Y. (2005). Optical properties of silicon nanocrystals embedded in a SiO2 matrix. Physical Review B 72, 1-7.
dc.identifier.issn 1098-0121
dc.identifier.uri http://hdl.handle.net/10220/6358
dc.description.abstract Optical properties of isolated silicon nanocrystals (nc-Si) with a mean size of ∼4 nm embedded in a SiO2 matrix that was synthesized with an ion beam technique have been determined with spectroscopic ellipsometry in the photon energy range of 1.1–5.0 eV. The optical properties of the nc-Si are found to be well described by both the Lorentz oscillator model and the Forouhi-Bloomer (FB) model. The nc-Si exhibits a significant reduction in the dielectric functions and optical constants and a large blueshift (∼0.6 eV) in the absorption spectrum as compared with bulk crystalline silicon. The band gap of the nc-Si obtained from the FB model is ∼1.7 eV, showing a large band gap expansion of ∼0.6 eV relative to the bulk value. The band gap expansion is in very good agreement with the first-principles calculation of the nc-Si optical gap based on quantum confinement.
dc.format.extent 7 p.
dc.language.iso en
dc.relation.ispartofseries Physical review B
dc.rights Physical Review B © copyright 2005 American Physical Society. The journal's website is located at http://link.aps.org/doi/10.1103/PhysRevB.72.125419
dc.subject DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
dc.title Optical properties of silicon nanocrystals embedded in a SiO2 matrix
dc.type Journal Article
dc.contributor.school School of Electrical and Electronic Engineering
dc.identifier.doi http://dx.doi.org/10.1103/PhysRevB.72.125419
dc.description.version Published version

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