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Thermal annealing effect on the band gap and dielectric functions of silicon nanocrystals embedded in SiO2 matrix.

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Thermal annealing effect on the band gap and dielectric functions of silicon nanocrystals embedded in SiO2 matrix.

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Title: Thermal annealing effect on the band gap and dielectric functions of silicon nanocrystals embedded in SiO2 matrix.
Author: Ding, Liang.; Chen, Tupei.; Liu, Yang.; Ng, Chi Yung.; Liu, Yu Chan.; Fung, Stevenson Hon Yuen.
Copyright year: 2005
Abstract: The thermal annealing effect on band gap and dielectric functions of silicon nanocrystals (nc-Si) embedded in a SiO2 matrix synthesized by Si ion implantation is investigated by spectroscopic ellipsometry. A large band-gap expansion of nc-Si relative to bulk crystalline silicon has been observed. The band gap of the nc-Si for the nonannealing condition (i.e., as implanted) is 1.78 eV while it is 1.72 eV for the annealing at 1000 °C for 100 min. The slight decrease in the band gap is attributed to the slight increase in the nc-Si size with annealing. The dielectric functions of nc-Si show a significant suppression, as compared to bulk crystalline silicon, due to the quantum size effect. Annealing results in a small change in the static dielectric constant, which can be explained in terms of the size effect also.
Subject: DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics.
Type: Journal Article
Series/ Journal Title: Applied physics letters
School: School of Electrical and Electronic Engineering
Related Organization: Singapore Institute of Manufacturing Technology
Rights: Applied Physics Letters © copyright 2005 American Institute of Physics. The journal's website is located at http://apl.aip.org/applab/v87/i12/p121903_s1?isAuthorized=no
Version: Published version

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