Thermal annealing effect on the band gap and dielectric functions of silicon nanocrystals embedded in SiO2 matrix.

Abstract

The thermal annealing effect on band gap and dielectric functions of silicon nanocrystals (nc-Si) embedded in a SiO2 matrix synthesized by Si ion implantation is investigated by spectroscopic ellipsometry. A large band-gap expansion of nc-Si relative to bulk crystalline silicon has been observed. The band gap of the nc-Si for the nonannealing condition (i.e., as implanted) is 1.78 eV while it is 1.72 eV for the annealing at 1000 °C for 100 min. The slight decrease in the band gap is attributed to the slight increase in the nc-Si size with annealing. The dielectric functions of nc-Si show a significant suppression, as compared to bulk crystalline silicon, due to the quantum size effect. Annealing results in a small change in the static dielectric constant, which can be explained in terms of the size effect also.