mirage

Thermal annealing effect on the band gap and dielectric functions of silicon nanocrystals embedded in SiO2 matrix

DSpace/Manakin Repository

 

Search DR-NTU


Advanced Search Subject Search

Browse

My Account

Thermal annealing effect on the band gap and dielectric functions of silicon nanocrystals embedded in SiO2 matrix

Show simple item record

dc.contributor.author Ding, Liang
dc.contributor.author Chen, Tupei
dc.contributor.author Liu, Yang
dc.contributor.author Ng, Chi Yung
dc.contributor.author Liu, Yu Chan
dc.contributor.author Fung, Stevenson Hon Yuen
dc.date.accessioned 2010-09-03T07:47:53Z
dc.date.available 2010-09-03T07:47:53Z
dc.date.copyright 2005
dc.date.issued 2010-09-03T07:47:53Z
dc.identifier.citation Ding, L., Chen, T., Liu, Y., Ng, C. Y., Liu, Y. C., & Fung, S. H. Y. (2005). Thermal annealing effect on the band gap and dielectric functions of silicon nanocrystals embedded in SiO2 matrix. Applied Physics Letters, 87, 1-4.
dc.identifier.issn 0003-6951
dc.identifier.uri http://hdl.handle.net/10220/6398
dc.description.abstract The thermal annealing effect on band gap and dielectric functions of silicon nanocrystals (nc-Si) embedded in a SiO2 matrix synthesized by Si ion implantation is investigated by spectroscopic ellipsometry. A large band-gap expansion of nc-Si relative to bulk crystalline silicon has been observed. The band gap of the nc-Si for the nonannealing condition (i.e., as implanted) is 1.78 eV while it is 1.72 eV for the annealing at 1000 °C for 100 min. The slight decrease in the band gap is attributed to the slight increase in the nc-Si size with annealing. The dielectric functions of nc-Si show a significant suppression, as compared to bulk crystalline silicon, due to the quantum size effect. Annealing results in a small change in the static dielectric constant, which can be explained in terms of the size effect also.
dc.format.extent 4 p.
dc.language.iso en
dc.relation.ispartofseries Applied physics letters
dc.rights Applied Physics Letters © copyright 2005 American Institute of Physics. The journal's website is located at http://apl.aip.org/applab/v87/i12/p121903_s1?isAuthorized=no
dc.subject DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics
dc.title Thermal annealing effect on the band gap and dielectric functions of silicon nanocrystals embedded in SiO2 matrix
dc.type Journal Article
dc.contributor.school School of Electrical and Electronic Engineering
dc.identifier.doi http://dx.doi.org/10.1063/1.2051807
dc.description.version Published version
dc.contributor.organization Singapore Institute of Manufacturing Technology

Files in this item

Files Size Format View
Thermal anneali ... mbedded in SiO2 matrix.pdf 79.26Kb PDF View/Open

This item appears in the following Collection(s)

Show simple item record

Statistics

Total views

All Items Views
Thermal annealing effect on the band gap and dielectric functions of silicon nanocrystals embedded in SiO2 matrix 309

Total downloads

All Bitstreams Views
Thermal annealing effect on the band gap and dielectric functions of silicon nanocrystals embedded in SiO2 matrix.pdf 160

Top country downloads

Country Code Views
China 74
United States of America 37
Singapore 19
Nigeria 8
Russian Federation 5

Top city downloads

city Views
Beijing 40
Mountain View 31
Singapore 19
Orlando 2
Southampton 2