| dc.contributor.author |
Ding, Liang. |
| dc.contributor.author |
Chen, Tupei. |
| dc.contributor.author |
Liu, Yang. |
| dc.contributor.author |
Ng, Chi Yung. |
| dc.contributor.author |
Liu, Yu Chan. |
| dc.contributor.author |
Fung, Stevenson Hon Yuen. |
| dc.date.accessioned |
2010-09-03T07:47:53Z |
| dc.date.available |
2010-09-03T07:47:53Z |
| dc.date.copyright |
2005 |
| dc.date.issued |
2010-09-03T07:47:53Z |
| dc.identifier.citation |
Ding, L., Chen, T., Liu, Y., Ng, C. Y., Liu, Y. C., & Fung, S. H. Y. (2005). Thermal annealing effect on the band gap and dielectric functions of silicon nanocrystals embedded in SiO2 matrix. Applied Physics Letters, 87, 1-4. |
| dc.identifier.issn |
0003-6951 |
| dc.identifier.uri |
http://hdl.handle.net/10220/6398 |
| dc.description.abstract |
The thermal annealing effect on band gap and dielectric functions of silicon nanocrystals (nc-Si) embedded in a SiO2 matrix synthesized by Si ion implantation is investigated by spectroscopic ellipsometry. A large band-gap expansion of nc-Si relative to bulk crystalline silicon has been observed. The band gap of the nc-Si for the nonannealing condition (i.e., as implanted) is 1.78 eV while it is 1.72 eV for the annealing at 1000 °C for 100 min. The slight decrease in the band gap is attributed to the slight increase in the nc-Si size with annealing. The dielectric functions of nc-Si show a significant suppression, as compared to bulk crystalline silicon, due to the quantum size effect. Annealing results in a small change in the static dielectric constant, which can be explained in terms of the size effect also. |
| dc.format.extent |
4 p. |
| dc.language.iso |
en |
| dc.relation.ispartofseries |
Applied physics letters |
| dc.rights |
Applied Physics Letters © copyright 2005 American Institute of Physics. The journal's website is located at http://apl.aip.org/applab/v87/i12/p121903_s1?isAuthorized=no |
| dc.subject |
DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics. |
| dc.title |
Thermal annealing effect on the band gap and dielectric functions of silicon nanocrystals embedded in SiO2 matrix. |
| dc.type |
Journal Article |
| dc.contributor.school |
School of Electrical and Electronic Engineering |
| dc.identifier.doi |
http://dx.doi.org/10.1063/1.2051807 |
| dc.description.version |
Published version |
| dc.contributor.organization |
Singapore Institute of Manufacturing Technology |
