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Influence of nanocrystal size on optical properties of Si nanocrystals embedded in SiO2 synthesized by Si ion implantation

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Influence of nanocrystal size on optical properties of Si nanocrystals embedded in SiO2 synthesized by Si ion implantation

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dc.contributor.author Tan, M. C.
dc.contributor.author Ding, Liang
dc.contributor.author Chen, Tupei
dc.contributor.author Liu, Yang
dc.contributor.author Yang, Ming
dc.contributor.author Wong, Jen It
dc.contributor.author Trigg, Alastair David
dc.contributor.author Fung, Stevenson Hon Yuen
dc.contributor.author Liu, Yu Chan
dc.contributor.author Zhu, Fu Rong
dc.date.accessioned 2010-09-03T08:22:24Z
dc.date.available 2010-09-03T08:22:24Z
dc.date.copyright 2007
dc.date.issued 2010-09-03T08:22:24Z
dc.identifier.citation Tan, M. C., Ding, L., Chen, T, P., Liu, Y., Yang, M., Wong, J. I., et al. (2007). Influence of nanocrystal size on optical properties of Si nanocrystals embedded in SiO2 synthesized by Si ion implantation. Journal of Applied Physics, 101, 1-6.
dc.identifier.issn 0021-8979
dc.identifier.uri http://hdl.handle.net/10220/6399
dc.description.abstract Si nanocrystals (nc-Si) with different sizes embedded in SiO2 matrix have been synthesized with various recipes of Si ion implantation. The influence of nanocrystal size on optical properties, including dielectric functions and optical constants, of the nc-Si has been investigated with spectroscopic ellipsometry. The optical properties of the nc-Si are found to be well described by the four-term Forouhi-Bloomer model. A strong dependence of the dielectric functions and optical constants on the nc-Si size is observed. For the imaginary part of the dielectric functions, the magnitude of the main peaks at the transition energies E1 and E2 exhibits a large reduction and a significant redshift in E2 depending on the nc-Si size. A band gap expansion is observed when the nc-Si size is reduced. The band gap expansion with the reduction of nc-Si size is in good agreement with the prediction of first-principles calculations based on quantum confinement.
dc.format.extent 6 p.
dc.language.iso en
dc.relation.ispartofseries Journal of applied physics
dc.rights Journal of Applied Physics © copyright 2007 American Institute of Physics. The journal's website is located at http://jap.aip.org/japiau/v101/i10/p103525_s1?isAuthorized=no
dc.subject DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics.
dc.title Influence of nanocrystal size on optical properties of Si nanocrystals embedded in SiO2 synthesized by Si ion implantation
dc.type Journal Article
dc.contributor.research Singapore Institute of Manufacturing Technology
dc.contributor.school School of Electrical and Electronic Engineering
dc.identifier.doi http://dx.doi.org/10.1063/1.2730560
dc.description.version Published version
dc.contributor.organization Institute of Microelectronics
dc.contributor.organization Institute of Materials Research and Engineering

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