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Title:
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Annealing effect on the optical properties of implanted silicon in a silicon nitride matrix.
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Author:
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Cen, Zhan Hong.; Chen, Tupei.; Ding, Liang.; Liu, Yang.; Yang, Ming.; Wong, Jen It.; Liu, Yu Chan.; Fung, Stevenson Hon Yuen.; Liu, Zhen.
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Copyright year:
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2008 |
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Abstract:
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Optical properties of implanted Si in a silicon nitride thin film have been determined with spectroscopic ellipsometry based on the Tauc–Lorentz (TL) model and the Bruggeman effective medium approximation. It is shown that the suppressed dielectric functions of the implanted Si are dominated by the energy transitions related to the critical point E2. The effect of thermal annealing on the dielectric functions of the implanted Si has been investigated. The analysis of the dielectric functions based on the evolution of the TL parameters can provide an insight into the structural changes in the implanted Si embedded in the Si3N4 matrix caused by the annealing. |
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Subject:
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DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics. |
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Type:
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Journal Article |
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Series/ Journal Title:
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Applied physics letters |
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School:
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School of Electrical and Electronic Engineering |
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Research Centre:
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Singapore Institute of Manufacturing Technology |
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Rights:
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Applied Physics Letters © copyright 2008 American Institute of Physics. The journal's website is located at http://apl.aip.org/applab/v93/i2/p023122_s1?isAuthorized=no |
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Version:
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Published version |
